PMF290XN,115 NXP

PMF290XN N-channel TrenchMOS extremely low level FET Rev. 01 27 February 2004 Product data M3D102 1. Product prole 1.1 Description N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Surface mounted package Footprint 40% smaller than SOT23 Low on-state resistance Low threshold voltage. 1.3 Applications Driver circuits Switching in portable appliances. 1.4 Quick reference data V 20 V I 1A DS D P 0.56 W R 350 m. tot DSon 2. Pinning information Table 1: Pinning - SOT323 (SC-70), simplied outline and symbol Pin Description Simplied outline Symbol 1 gate (g) 3 d 2 source (s) 3 drain (d) g 12 s MBB076 MBC870 Top view SOT323 (SC-70)PMF290XN Philips Semiconductors N-channel TrenchMOS extremely low level FET 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PMF290XN SC-70 Plastic surface mounted package 3 leads SOT323 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) 25 C T 150 C - 20 V DS j V drain-gate voltage (DC) 25 C T 150 C R =20k -20 V DGR j GS V gate-source voltage (DC) - 12 V GS I drain current (DC) T =25 C V = 4.5 V Figure 2 and 3 -1 A D sp GS T = 100 C V = 4.5 V Figure 2 - 0.63 A sp GS I peak drain current T =25 C pulsed t 10 s Figure 3 -2 A DM sp p P total power dissipation T =25 C Figure 1 - 0.56 W tot sp T storage temperature - 55 +150 C stg T junction temperature - 55 +150 C j Source-drain diode I source (diode forward) current (DC) T =25 C - 0.47 A S sp I peak source (diode forward) current T =25 C pulsed t 10 s - 0.94 A SM sp p 9397 750 12767 Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev. 01 27 February 2004 2 of 12