PMF63UN 20 V, single N-channel Trench MOSFET Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast switching 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C --20 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =4.5 V T =25C t 5 s --1.9 A D GS amb Static characteristics R drain-source on-state V =4.5 V I = 1.8 A T = 25 C - 63 74 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 3 2S source 3 D drain G 12 S 017aaa253 SOT323 (SC-70) SOT323PMF63UN NXP Semiconductors 20 V, single N-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMF63UN SC-70 plastic surface-mounted package 3 leads SOT323 4. Marking Table 4. Marking codes 1 Type number Marking code PMF63UN V8% 1 % = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T =25C - 20 V DS j V gate-source voltage -8 8 V GS 1 I drain current V =4.5 V T =25C t 5 s -1.9 A D GS amb 1 V =4.5 V T =25C -1.8 A GS amb 1 V =4.5 V T =100 C -1.1 A GS amb I peak drain current T = 25 C single pulse t 10 s - 7.2 A DM amb p 2 P total power dissipation T =25C - 275 mW tot amb 1 - 350 mW T = 25 C - 1785 mW sp T junction temperature -55 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg Source-drain diode 1 I source current T =25C -0.8 A S amb 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PMF63UN All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 22 March 2012 2 of 15