Product Information

PMG370XN,115

PMG370XN,115 electronic component of NXP

Datasheet
Trans MOSFET N-CH 30V 0.96A 6-Pin TSSOP T/R
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

65: USD 0.3353 ea
Line Total: USD 21.79

0 - Global Stock
MOQ: 65  Multiples: 1
Pack Size: 1

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Gate-Source Voltage Max
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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Additional Infomation About Product

PMG370XN N-channel TrenchMOS extremely low level FET Rev. 01 13 February 2004 Product data MBD128 1. Product prole 1.1 Description N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Surface mounted package Footprint 40% smaller than SOT23 Low on-state resistance Low threshold voltage. 1.3 Applications Driver circuits Switching in portable appliances. 1.4 Quick reference data V 30 V I 0.96 A DS D P 0.69 W R 440 m. tot DSon 2. Pinning information Table 1: Pinning - SOT363 (SC-88), simplied outline and symbol Pin Description Simplied outline Symbol 1 drain (d) 65 4 d 2 drain (d) 3 gate (g) g 4 source (s) 5 drain (d) s MBB076 6 drain (d) 12 3 Top view MSA370 SOT363 (SC-88)PMG370XN Philips Semiconductors N-channel TrenchMOS extremely low level FET 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PMG370XN SC-88 Plastic surface mounted package; 6 leads SOT363 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) 25 C T 150 C - 30 V DS j V drain-gate voltage (DC) 25 C T 150 C; R =20k -30 V DGR j GS V gate-source voltage (DC) - 12 V GS I drain current (DC) T =25 C; V = 4.5 V; Figure 2 and 3 - 0.96 A D sp GS T = 100 C; V = 4.5 V; Figure 2 - 0.61 A sp GS I peak drain current T =25 C; pulsed; t 10 s; Figure 3 - 1.92 A DM sp p P total power dissipation T =25 C; Figure 1 - 0.69 W tot sp T storage temperature - 55 +150 C stg T junction temperature - 55 +150 C j Source-drain diode I source (diode forward) current (DC) T =25 C - 0.57 A S sp I peak source (diode forward) current T =25 C; pulsed; t 10 s - 1.15 A SM sp p 9397 750 12822 Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev. 01 13 February 2004 2 of 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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