Product Information

PMN30ENEAX

PMN30ENEAX electronic component of Nexperia

Datasheet
MOSFET PMN30ENEASOT457SC-74
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.5741 ea
Line Total: USD 2.87

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 5
Multiples : 1

Stock Image

PMN30ENEAX
Nexperia

5 : USD 0.5741
10 : USD 0.4062
100 : USD 0.2408
500 : USD 0.1884
1000 : USD 0.1392

0 - WHS 2


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

PMN30ENEAX
Nexperia

1 : USD 0.3928
10 : USD 0.3258
30 : USD 0.2928
100 : USD 0.2599
500 : USD 0.229
1000 : USD 0.218

0 - WHS 3


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

PMN30ENEAX
Nexperia

1 : USD 1.2168
10 : USD 0.5454
100 : USD 0.2703
500 : USD 0.203
1000 : USD 0.1522
3000 : USD 0.1305
24000 : USD 0.1181

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

The PMN30ENEAX with MOSFET PMN30ENEASOT457SC-74 is a N-channel enhancement mode vertical D-MOS transistor produced by Nexperia. It is designed for use in low voltage applications, and features an SOT457SC-74 plastic package with low R DS(on) and fast switching cleanliness. The device has a wide drain voltage range of -50V and R DS(on) of 30mOhm @ VGS = -4.5V. This MOSFET is capable of providing high gain, high speed switching, and low losses. Additionally, the low threshold voltage makes it an ideal solution for single cell battery applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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