Product Information

PMN28UN,135

PMN28UN,135 electronic component of NXP

Datasheet
Trans MOSFET N-CH 12V 5.7A 6-Pin TSOP T/R
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

59: USD 0.4144 ea
Line Total: USD 24.45

0 - Global Stock
MOQ: 59  Multiples: 1
Pack Size: 1

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Gate-Source Voltage Max
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
Deleted
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Additional Infomation About Product

PMN28UN TrenchMOS ultra low level FET Rev. 01 27 September 2002 Product data M3D302 1. Description N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS technology. Product availability: PMN28UN in SOT457 (TSOP6). 2. Features TrenchMOS technology Very fast switching Low threshold voltage Surface mount package. 3. Applications Battery powered motor control Load switch in notebook computers High speed switch in set top box power supplies Driver FET in DC to DC converters. 4. Pinning information Table 1: Pinning - SOT457 (TSOP6), simplied outline and symbol Pin Description Simplied outline Symbol 1,2,5,6 drain (d) d 6 5 4 3 gate (g) 4 source (s) g s MBB076 132 Top view MBK092 SOT457 (TSOP6)PMN28UN Philips Semiconductors TrenchMOS ultra low level FET 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit V drain-source voltage (DC) 25 C T 150 C - 12 V DS j I drain current (DC) T =25 C; V = 4.5 V - 5.7 A D sp GS P total power dissipation T =25 C - 1.75 W tot sp T junction temperature - 150 C j R drain-source on-state resistance V = 4.5 V; I = 2 A; T =25 C 2834m DSon GS D j V = 2.5 V; I = 2 A; T =25 C 3240m GS D j V = 1.8 V; I = 1.5 A; T =25 C 3956m GS D j 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) 25 C T 150 C - 12 V DS j V gate-source voltage (DC) - 8V GS I drain current (DC) T =25 C; V = 4.5 V; Figure 2 and 3 - 5.7 A D sp GS T =70 C; V = 4.5 V; Figure 2 - 4.5 A sp GS I peak drain current T =25 C; pulsed; t 10 s; Figure 3 - 22.9 A DM sp p P total power dissipation T =25 C; Figure 1 - 1.75 W tot sp T storage temperature - 55 +150 C stg T junction temperature - 55 +150 C j Source-drain diode I source (diode forward) current (DC) T =25 C - 1.45 A S sp 9397 750 10191 Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 27 September 2002 2 of 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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