Product Information

PMPB27EP,115

PMPB27EP,115 electronic component of Nexperia

Datasheet
MOSFET PMPB27EP/SOT1220/REEL7
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5048 ea
Line Total: USD 0.5

9453 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
5383 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

PMPB27EP,115
Nexperia

1 : USD 0.2376
10 : USD 0.2352
25 : USD 0.2257
100 : USD 0.1753
250 : USD 0.1431
500 : USD 0.1402
1000 : USD 0.1402
3000 : USD 0.1402

1 - WHS 2


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

PMPB27EP,115
Nexperia

1 : USD 0.5177
10 : USD 0.4211
30 : USD 0.3788
100 : USD 0.3264
500 : USD 0.2841
1000 : USD 0.27

9453 - WHS 3


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

PMPB27EP,115
Nexperia

1 : USD 0.5048
10 : USD 0.3944
100 : USD 0.2162
1000 : USD 0.1587
3000 : USD 0.1414
9000 : USD 0.1346
24000 : USD 0.1346
45000 : USD 0.1288

5383 - WHS 4


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 52
Multiples : 1

Stock Image

PMPB27EP,115
Nexperia

52 : USD 0.2257
100 : USD 0.1753
250 : USD 0.1431
500 : USD 0.1402

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif

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Additional Infomation About Product

PMPB27EP 30 V, single P-channel Trench MOSFET 10 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection 1.3 Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portable devices Hard disk and computing power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -30 V DS j V gate-source voltage -20 - 20 V GS I drain current V = -10 V T = 25 C t 5 s 1 - - -8.8 A D GS amb Static characteristics R drain-source on-state V = -10 V I = -6.1 A T = 25 C - 24 29 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMPB27EP 30 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 D drain 1 6 2 D drain 7 2 5 G 3 G gate 3 4 8 S 4 S source 017aaa257 Transparent top view 5 D drain DFN2020MD-6 (SOT1220) 6 D drain 7 D drain 8 S source 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMPB27EP DFN2020MD-6 plastic thermal enhanced ultra thin small outline package no SOT1220 leads 6 terminals 4. Marking Table 4. Marking codes Type number Marking code PMPB27EP 1V 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - -30 V DS j V gate-source voltage -20 20 V GS I drain current V = -10 V T = 25 C t 5 s 1 - -8.8 A D GS amb V = -10 V T = 25 C 1 - -6.1 A GS amb V = -10 V T = 100 C 1 - -3.9 A GS amb I peak drain current T = 25 C single pulse t 10 s - -25 A DM amb p P total power dissipation T = 25 C 1 - 1.7 W tot amb PMPB27EP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 10 September 2012 2 / 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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