PMXB43UNEZ Nexperia

PMXB43UNEZ electronic component of Nexperia
PMXB43UNEZ Nexperia
PMXB43UNEZ MOSFETs
PMXB43UNEZ  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PMXB43UNEZ MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMXB43UNEZ MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PMXB43UNEZ
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET 20 V, N-channel Trench MOSFET
Datasheet: PMXB43UNEZ Datasheet (PDF)
Price (USD)
1: USD 0.725 ea
Line Total: USD 0.72 
Availability : 0
  
QtyUnit Price
1$ 0.725
10$ 0.425
100$ 0.2611
5000$ 0.1309

Availability 0
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 5000
Multiples : 5000
QtyUnit Price
5000$ 0.0964
10000$ 0.0851
15000$ 0.0827


Availability 0
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 5000
Multiples : 5000
QtyUnit Price
5000$ 0.0958
10000$ 0.085
15000$ 0.0827


Availability 0
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.0972


Availability 0
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.3218
50$ 0.2562
150$ 0.1712
500$ 0.1304
2500$ 0.1199
5000$ 0.1135


Availability 0
Ship by Tue. 18 Nov to Thu. 20 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.725
10$ 0.425
100$ 0.2611
5000$ 0.1309


Availability 0
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 5000
Multiples : 5000
QtyUnit Price
5000$ 0.1066
10000$ 0.0942


Availability 0
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 5000
Multiples : 5000
QtyUnit Price
5000$ 0.1066
10000$ 0.0942


Availability 0
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 530
Multiples : 1
QtyUnit Price
530$ 0.4914


Availability 0
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 5000
Multiples : 5000
QtyUnit Price
5000$ 0.1066
10000$ 0.0942


Availability 0
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 530
Multiples : 1
QtyUnit Price
530$ 0.4914

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMXB43UNEZ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMXB43UNEZ and other electronic components in the MOSFETs category and beyond.

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PMXB43UNE 20 V, N-channel Trench MOSFET 19 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 1.0 0.37 mm Exposed drain pad for excellent thermal conduction Very low Drain-Source on-state resistance R = 42 m in high density DSon 1 kV ESD protected 3. Applications Low-side load switch and charging switch for portable devices Power management in battery-driven portables LED driver DC-to-DC converters 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C 1 - - 3.2 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 3.2 A T = 25 C - 42 54 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMXB43UNE 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 2 S source 3 D drain 4 3 G 4 D drain 2 S Transparent top view 017aaa255 DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMXB43UNE DFN1010D-3 plastic thermal enhanced ultra thin small outline package no SOT1215 leads 3 terminals body 1.1 x 1.0 x 0.37 mm 7. Marking Table 4. Marking codes Type number Marking code PMXB43UNE 11 00 00 READING DIRECTION MARKING CODE (EXAMPLE) YEAR DATE CODE VENDOR CODE PIN 1 MARK-FREE AREA INDICATION MARK READING EXAMPLE: 11 01 10 aaa-008041 Fig. 1. DFN1010D-3 (SOT1215) binary marking code description PMXB43UNE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 19 September 2013 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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