Product Information

PMXB43UNEZ

PMXB43UNEZ electronic component of Nexperia

Datasheet
NXP Semiconductors MOSFET 20 V, N-channel Trench MOSFET

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

92: USD 0.1023 ea
Line Total: USD 9.41

194 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 92  Multiples: 1
Pack Size: 1
Availability Price Quantity
194 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

PMXB43UNEZ
Nexperia

1 : USD 0.1225
10 : USD 0.1023
100 : USD 0.0879
1000 : USD 0.0854
5000 : USD 0.0836
10000 : USD 0.0819
25000 : USD 0.0819
50000 : USD 0.0819

1100 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

PMXB43UNEZ
Nexperia

1 : USD 0.4711
10 : USD 0.3334
100 : USD 0.1507
1000 : USD 0.1127
5000 : USD 0.1032
10000 : USD 0.0973
25000 : USD 0.0973
50000 : USD 0.089
100000 : USD 0.0866

194 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 92
Multiples : 1

Stock Image

PMXB43UNEZ
Nexperia

92 : USD 0.1023
100 : USD 0.0879
1000 : USD 0.0854
5000 : USD 0.0836
10000 : USD 0.0819

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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PMXB43UNE 20 V, N-channel Trench MOSFET 19 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 1.0 0.37 mm Exposed drain pad for excellent thermal conduction Very low Drain-Source on-state resistance R = 42 m in high density DSon 1 kV ESD protected 3. Applications Low-side load switch and charging switch for portable devices Power management in battery-driven portables LED driver DC-to-DC converters 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C 1 - - 3.2 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 3.2 A T = 25 C - 42 54 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMXB43UNE 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 2 S source 3 D drain 4 3 G 4 D drain 2 S Transparent top view 017aaa255 DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMXB43UNE DFN1010D-3 plastic thermal enhanced ultra thin small outline package no SOT1215 leads 3 terminals body 1.1 x 1.0 x 0.37 mm 7. Marking Table 4. Marking codes Type number Marking code PMXB43UNE 11 00 00 READING DIRECTION MARKING CODE (EXAMPLE) YEAR DATE CODE VENDOR CODE PIN 1 MARK-FREE AREA INDICATION MARK READING EXAMPLE: 11 01 10 aaa-008041 Fig. 1. DFN1010D-3 (SOT1215) binary marking code description PMXB43UNE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 19 September 2013 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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