Product Information

PMV65XPEA

PMV65XPEA electronic component of Nexperia

Datasheet
MOSFET, P-CH, -20V, -2.8A, TO236AB
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.308 ea
Line Total: USD 1.54

2880 - Global Stock
Ships to you between
Mon. 03 Jun to Thu. 06 Jun
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
2880 - WHS 1


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 5
Multiples : 5

Stock Image

PMV65XPEA
Nexperia

5 : USD 0.2985
50 : USD 0.2401
150 : USD 0.2151
500 : USD 0.184
3000 : USD 0.1701
6000 : USD 0.1617

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif

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Additional Infomation About Product

PMV65XPEA 20 V, P-channel Trench MOSFET 27 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability: P = 890 mW tot ElectroStatic Discharge (ESD) protection 2 kV HBM AEC-Q101 qualified 3. Applications Relay driver High speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -3.3 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -2.8 A T = 25 C - 67 78 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this product SOT23NXP Semiconductors PMV65XPEA 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 D 1 G gate 2 S source 3 D drain G 1 2 TO-236AB (SOT23) S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV65XPEA TO-236AB plastic surface-mounted package 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code 1 PMV65XPEA DN% 1 % = placeholder for manufacturing site code PMV65XPEA All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 27 November 2014 2 / 16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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