Product Information

PMV65XPER

PMV65XPER electronic component of Nexperia

Datasheet
P-Channel 20 V 2.8A (Ta) 480mW (Ta), 6.25W (Tc) Surface Mount TO-236AB
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3404 ea
Line Total: USD 0.34

11924 - Global Stock
Ships to you between
Fri. 24 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
7 - WHS 1


Ships to you between
Mon. 27 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

PMV65XPER
Nexperia

1 : USD 0.6224
10 : USD 0.6085
30 : USD 0.6006
100 : USD 0.5908

11924 - WHS 2


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

PMV65XPER
Nexperia

1 : USD 0.3404
10 : USD 0.2553
100 : USD 0.153
1000 : USD 0.1173
3000 : USD 0.0978
9000 : USD 0.092
24000 : USD 0.0908
45000 : USD 0.0874

2813 - WHS 3


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 5
Multiples : 1

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PMV65XPER
Nexperia

5 : USD 0.4186
25 : USD 0.2132
100 : USD 0.1911
107 : USD 0.1521
294 : USD 0.1443

4263 - WHS 4


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 84
Multiples : 1

Stock Image

PMV65XPER
Nexperia

84 : USD 0.1889
100 : USD 0.1372
250 : USD 0.0988
500 : USD 0.0968

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

PMV65XPE 20 V, P-channel Trench MOSFET 25 April 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability: P = 890 mW tot ElectroStatic Discharge (ESD) protection 2 kV HBM 3. Applications Relay driver High speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -3.3 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -2.8 A T = 25 C - 67 78 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMV65XPE 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 3 2 S source 3 D drain G 1 2 TO-236AB (SOT23) S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV65XPE TO-236AB plastic surface-mounted package 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code 1 PMV65XPE %KE 1 % = placeholder for manufacturing site code PMV65XPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 25 April 2014 2 / 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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