PMV45EN,215

PMV45EN N-channel TrenchMOS logic level FET Rev. 2 7 November 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications. 1.2 Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching 1.3 Applications Battery management High-speed switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 150C --30 V DS j j I drain current T =25 C V =10 V see Figure 1 --5.4 A D sp GS see Figure 3 V gate-source voltage -20 - 20 V GS Static characteristics R drain-source on-state V =10V I =2A T =25 C see - 3542m DSon GS D j resistance Figure 9 see Figure 10 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2S source 3 D drain G 12 mbb076 S SOT23 (TO-236AB) SOT23PMV45EN NXP Semiconductors N-channel TrenchMOS logic level FET 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV45EN TO-236AB plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code PMV45EN %4N 1 % = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 150 C - 30 V DS j j V drain-gate voltage T 25 C T 150 C R =20k -30 V DGR j j GS V gate-source voltage -20 20 V GS I drain current T = 100 C V =10 V see Figure 1 -3.4 A D sp GS T =25 C V =10 V see Figure 1 -5.4 A sp GS see Figure 3 I peak drain current T = 25 C pulsed t 10 s see - 21.6 A DM sp p Figure 3 P total power dissipation T =25 C see Figure 2 -2 W tot sp T storage temperature -55 150 C stg T junction temperature -55 150 C j Source-drain diode I source current T =25C - 1.7 A S sp I peak source current T = 25 C pulsed t 10 s - 6.9 A SM sp p PMV45EN All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 7 November 2011 2 of 13