X-On Electronics has gained recognition as a prominent supplier of PMZ350UPEYL MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMZ350UPEYL MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMZ350UPEYL Nexperia

PMZ350UPEYL electronic component of Nexperia
PMZ350UPEYL Nexperia
PMZ350UPEYL MOSFETs
PMZ350UPEYL  Semiconductors

Images are for reference only
See Product Specifications
Part No. PMZ350UPEYL
Manufacturer: Nexperia
Category: MOSFETs
Description: P-Channel 20 V 1A (Ta) 360mW (Ta), 3.125W (Tc) Surface Mount SOT-883
Datasheet: PMZ350UPEYL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
9390: USD 0.0277 ea
Line Total: USD 260.1 
Availability - 11640
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ: 9390  Multiples: 1
Pack Size: 1
Availability Price Quantity
2046
Ship by Wed. 11 Jun to Mon. 16 Jun
MOQ : 10
Multiples : 10
10 : USD 0.083
100 : USD 0.066
300 : USD 0.0574
1000 : USD 0.0344
5000 : USD 0.0309
10000 : USD 0.029

8045
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ : 1
Multiples : 1
1 : USD 0.392
10 : USD 0.1988
100 : USD 0.1148
250 : USD 0.0756
686 : USD 0.0714

552900
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 8721
Multiples : 1
8721 : USD 0.0537
10000 : USD 0.048
100000 : USD 0.0401

9578
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 1117
Multiples : 1
1117 : USD 0.2327
1399 : USD 0.1859
2685 : USD 0.0968

145500
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 8721
Multiples : 1
8721 : USD 0.0537
10000 : USD 0.048
100000 : USD 0.0401

83013
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 8721
Multiples : 1
8721 : USD 0.0537
10000 : USD 0.048
100000 : USD 0.0401

11640
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 9390
Multiples : 1
9390 : USD 0.0277
9662 : USD 0.0269
10000 : USD 0.0263

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Product
Type
Width
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMZ350UPEYL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMZ350UPEYL and other electronic components in the MOSFETs category and beyond.

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PMZ350UPE 20 V, P-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge (ESD) protection > 1.8 kV HBM Leadless ultra small SMD plastic package: 1.0 0.6 0.48 mm 3. Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -1.4 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -0.3 A T = 25 C - 330 450 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm .Nexperia PMZ350UPE 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 3 2 S source 2 Transparent 3 D drain G top view DFN1006-3 (SOT883) S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZ350UPE DFN1006-3 DFN1006-3: leadless ultra small plastic package 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number Marking code PMZ350UPE ZP PMZ350UPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 14 May 2014 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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