PD - 94403A IRL3716 SMPS MOSFET IRL3716S IRL3716L HEXFET Power MOSFET Applications High Frequency Isolated DC-DC V R max I DSS DS(on) D Converters with Synchronous Rectification 20V 4.0m 180A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Active Oring Benefits Ultra-Low Gate Impedance Very Low R at 4.5V V DS(on) GS Fully Characterized Avalanche Voltage 2 TO-220AB D Pak TO-262 and Current IRL3716 IRL3716S IRL3716L Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-Source Voltage 20 V DS V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 180 D C GS I T = 100C Continuous Drain Current, V 10V 130 A D C GS I Pulsed Drain Current 720 DM P T = 25C Maximum Power Dissipation 210 W D C P T = 100C Maximum Power Dissipation 100 W D C Linear Derating Factor 1.4 W/C T , T Junction and Storage Temperature Range -55 to + 175 C J STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.72 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA R Junction-to-Ambient (PCB mount) 40 JA Notes through are on page 11 www.irf.com 1 IRL3716/3716S/3716L Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max.Units Conditions V Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.021 V/C Reference to 25C, I = 1mA (BR)DSS J D 3.0 4.0 V = 10V, I = 90A GS D R Static Drain-to-Source On-Resistance m DS(on) 4.0 4.8 V = 4.5V, I = 72A GS D V Gate Threshold Voltage 1.0 3.0 V V = V , I = 250A GS(th) DS GS D 20 V = 16V, V = 0V DS GS I Drain-to-Source Leakage Current DSS A 250 V = 16V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -16V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 100 S V = 10V, I = 72A fs DS D Q Total Gate Charge 53 79 I = 72A g D Q Gate-to-Source Charge 17 26 nC V = 16V gs DS Q Gate-to-Drain Mille) Charge 24 35 V = 4.5V gd GS Q Output Gate Charge 50 75 V = 0V, V = 10V oss GS DS R Gate Resistance 1.5 g t Turn-On Delay Time 18 V = 10V d(on) DD ns t Rise Time 140 I = 72A r D t Turn-Off Delay Time 38 R = 3.9 d(off) G t Fall Time 36 V = 4.5V f GS C Input Capacitance 5090 V = 0V iss GS pF C Output Capacitance 3440 V = 10V oss DS C Reverse Transfer Capacitance 560 = 1.0MHz rss Avalanche Characteristics Symbol Parameter Typ. Max. Units E Single Pulse Avalanche Energy 640 mJ AS I Avalanche Current 72 A AR Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 180 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 720 S (Body Diode) p-n junction diode. 0.93 1.3 V T = 25C, I = 72A, V = 0V J S GS V Diode Forward Voltage SD 0.80 T = 125C, I = 72A, V = 0V J S GS t Reverse Recovery Time 180 280 ns T = 25C, I = 72A, V =20V rr J F R Q Reverse Recovery Charge 87 130 nC di/dt = 100A/s rr t Reverse Recovery Time 190 280 ns T = 125C, I = 72A, V =20V rr J F R Q Reverse Recovery Charge 85 130 nC di/dt = 100A/s rr 2 www.irf.com