IRL3715Z IRL3715ZS IRL3715ZL Applications HEXFET Power MOSFET High Frequency Synchronous Buck Converters for Computer Processor Power V R max Qg DSS DS(on) 20V 11m 7.0nC Benefits Low R at 4.5V V DS(on) GS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 2 TO-220AB D Pak TO-262 IRL3715Z IRL3715ZS IRL3715ZL Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 20 V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 50 GS A D C Continuous Drain Current, V 10V 36 I T = 100C GS D C Pulsed Drain Current I 200 DM P T = 25C Maximum Power Dissipation 45 W C D P T = 100C Maximum Power Dissipation 23 C D Linear Derating Factor 0.30 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R 3.33 C/W JC Junction-to-Case R 0.50 CS Case-to-Sink, Flat Greased Surface R 62 JA Junction-to-Ambient R 40 JA Junction-to-Ambient (PCB Mount) Notes through are on page 12 www.irf.com 1 10/7/03 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 0.014 V/C Reference to 25C, I = 1mA D m R Static Drain-to-Source On-Resistance 9.2 11 V = 10V, I = 15A DS(on) GS D 12.4 15.5 V = 4.5V, I = 12A GS D V Gate Threshold Voltage 1.65 2.1 2.55 V V = V , I = 250A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -5.2 mV/C GS(th) J I DSS Drain-to-Source Leakage Current 1.0 A V = 16V, V = 0V DS GS 150 V = 16V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 31 S V = 10V, I = 12A DS D Q Total Gate Charge 7.0 11 g Q gs1 Pre-Vth Gate-to-Source Charge 2.1 V = 10V DS Q gs2 Post-Vth Gate-to-Source Charge 0.9 nC V = 4.5V GS Q gd Gate-to-Drain Charge 2.3 I = 12A D Q Gate Charge Overdrive 1.7 See Fig. 16 godr Q Switch Charge (Q + Q ) 3.2 sw gs2 gd Q Output Charge 3.7 nC V = 10V, V = 0V oss DS GS t Turn-On Delay Time 7.1 V = 10V, V = 4.5V d(on) DD GS t r Rise Time 44 I = 12A D t d(off) Turn-Off Delay Time 11 ns Clamped Inductive Load t Fall Time 4.6 f C Input Capacitance 870 V = 0V iss GS C Output Capacitance 270 pF V = 10V oss DS C Reverse Transfer Capacitance 140 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 44 mJ AS Avalanche Current I 12 A AR Repetitive Avalanche Energy E 4.5 mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions 50 D I S Continuous Source Current MOSFET symbol (Body Diode) A showing the G I Pulsed Source Current 200 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 12A, V = 0V SD J S GS t rr Reverse Recovery Time 9.1 14 ns T = 25C, I = 12A, V = 10V DD J F Q di/dt = 100A/s rr Reverse Recovery Charge 2.2 3.3 nC 2 www.irf.com