Product Information

PSMN011-30YLC

PSMN011-30YLC electronic component of Nexperia

Datasheet
MOSFET, N CH, 30V, 37A, LFPAK
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 0.5287 ea
Line Total: USD 52.87

0 - Global Stock
MOQ: 100  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 100
Multiples : 1

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PSMN011-30YLC
Nexperia

100 : USD 0.5287
500 : USD 0.4257
1000 : USD 0.3053
5000 : USD 0.2786

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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Additional Infomation About Product

PSMN011-30YLC N-channel 30 V 11.6 m logic level MOSFET in LFPAK using NextPower technology Rev. 3 24 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, Optimised for 4.5V Gate drive utilising qualified to 175C NextPower Superjunction technology Low parasitic inductance and Ultra low QG, QGD, & QOSS for high resistance system efficiencies at low and high loads 1.3 Applications DC-to-DC converters Synchronous buck regulator Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175C --30 V DS j I drain current T =25C V =10V see Figure 1 --37 A D mb GS P total power dissipation T =25C see Figure 2 --29 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state resistance V =4.5 V I =10 A T =25C - 12.3 14.5 m DSon GS D j see Figure 12 V =10V I =10A T =25C - 9.9 11.6 m GS D j see Figure 12 Dynamic characteristics Q gate-drain charge V =4.5 V I =10A V =15V see -1.4 -nC GD GS D DS Figure 14 see Figure 15 Q total gate charge V =4.5 V I =10A V =15V see -4.9 -nC G(tot) GS D DS Figure 14 see Figure 15 LFPAKPSMN011-30YLC NXP Semiconductors N-channel 30 V 11.6 m logic level MOSFET in LFPAK using NextPower technology 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 1234 SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN011-30YLC LFPAK Power-SO8 plastic single-ended surface-mounted package 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 30 V DS j V drain-gate voltage 25 C T 175 C R =20k -30 V DGR j GS V gate-source voltage -20 20 V GS I drain current V =10V T = 25 C see Figure 1 -37 A D GS mb V =10V T = 100 C see Figure 1 -26 A GS mb I peak drain current pulsed t 10 s T =25C - 150 A DM p mb see Figure 4 P total power dissipation T = 25 C see Figure 2 -29 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) V electrostatic discharge voltage MM (JEDEC JESD22-A115) 140 - V ESD Source-drain diode I source current T =25C - 26 A S mb I peak source current pulsed t 10 s T = 25 C - 150 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25 C I =37A -9 mJ DS(AL)S GS j(init) D avalanche energy V 30 V R =50 unclamped sup GS see Figure 3 PSMN011-30YLC All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 24 October 2011 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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