X-On Electronics has gained recognition as a prominent supplier of PSMN012-100YS,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN012-100YS,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN012-100YS,115 Nexperia

PSMN012-100YS,115 electronic component of Nexperia
PSMN012-100YS,115 Nexperia
PSMN012-100YS,115 MOSFETs
PSMN012-100YS,115  Semiconductors

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See Product Specifications
Part No. PSMN012-100YS,115
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 100 V 60A (Tc) 130W (Tc) Surface Mount LFPAK56, Power-SO8
Datasheet: PSMN012-100YS,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.675 ea
Line Total: USD 1.68 
Availability - 2654
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2654
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 1.675
10 : USD 1.248
100 : USD 0.8569
500 : USD 0.7084
1000 : USD 0.6303
1500 : USD 0.6215
3000 : USD 0.6072

1328
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 2.576
10 : USD 1.9222
18 : USD 1.1242
48 : USD 1.0626
1000 : USD 1.0402

5280
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 454
Multiples : 1
454 : USD 1.0341
504 : USD 0.9306
1000 : USD 0.8582
10000 : USD 0.7651
100000 : USD 0.6412

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the PSMN012-100YS,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN012-100YS,115 and other electronic components in the MOSFETs category and beyond.

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PSMN012-100YS N-channel 100V 12m standard level MOSFET in LFPAK Rev. 04 23 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T = 25 C see Figure 1 --60 A D mb P total power T = 25 C see Figure 2 - - 130 W tot mb dissipation T junction temperature -55 - 175 C j Avalanche ruggedness E non-repetitive V =10V T =25C - - 170 mJ DS(AL)S GS j(init) drain-source I =60 A V 100 V D sup avalanche energy R =50 unclamped GS Dynamic characteristics Q gate-drain charge V =10V I =45A -19 -nC GD GS D V = 50 V see Figure 14 DS Q total gate charge - 64 - nC G(tot) and 15PSMN012-100YS Nexperia N-channel 100V 12m standard level MOSFET in LFPAK Table 1. Quick reference continued Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V =10V I =15A --23 m DSon GS D on-state resistance T = 100 C see Figure 12 j V =10V I =15A - 1012m GS D T = 25 C see Figure 13 j 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN012-100YS LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 PSMN012-100YS 4 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 23 February 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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