Product Information

PSMN011-80YS,115

PSMN011-80YS,115 electronic component of Nexperia

Datasheet
Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 266A; 117W; SOT669
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.4445 ea
Line Total: USD 1.44

1610 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
14288 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.234
10 : USD 1.0251
100 : USD 0.8222
500 : USD 0.7179
1000 : USD 0.6004
1500 : USD 0.5743
3000 : USD 0.5743
9000 : USD 0.5517
24000 : USD 0.5505

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

PSMN011-80YS N-channel LFPAK 80 V 11 m standard level MOSFET Rev. 02 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 80 V DS j j I drain current T =25C V =10V --67 A D mb GS see Figure 1 P total power dissipation T =25C see Figure 2 --117W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =25A --18 m DSon GS D resistance T = 100 C see Figure 12 j V =10V I =25A -8.6 11 m GS D T =25C see Figure 12 j see Figure 13PSMN011-80YS Nexperia N-channel LFPAK 80 V 11 m standard level MOSFET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =10V I =25A -11 -nC GD GS D V = 40 V see Figure 14 DS Q total gate charge - 45 - nC G(tot) see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C --121mJ DS(AL)S GS j(init) drain-source avalanche I =67A V 80 V D sup energy R =50 unclamped GS 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN011-80YS LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 PSMN011-80YS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 28 October 2010 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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