X-On Electronics has gained recognition as a prominent supplier of PSMN012-60YS,115 mosfet across the USA, India, Europe, Australia, and various other global locations. PSMN012-60YS,115 mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

PSMN012-60YS,115 Nexperia

PSMN012-60YS,115 electronic component of Nexperia
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Part No.PSMN012-60YS,115
Manufacturer: Nexperia
Category:MOSFET
Description: MOSFET N-CHANNEL 60V STD LEVEL MOSFET
Datasheet: PSMN012-60YS,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6681 ea
Line Total: USD 0.67

Availability - 32222
Ships to you between
Tue. 11 Jun to Thu. 13 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2828 - WHS 1


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5409
10 : USD 0.5148
25 : USD 0.5097
100 : USD 0.481
250 : USD 0.4762
500 : USD 0.4715
1000 : USD 0.4384

32222 - WHS 2


Ships to you between Tue. 11 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 0.6681
10 : USD 0.5911
100 : USD 0.5267
500 : USD 0.506
1000 : USD 0.4612
1500 : USD 0.4025
3000 : USD 0.399
9000 : USD 0.3933
24000 : USD 0.391

29100 - WHS 3


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 1500
Multiples : 1500
1500 : USD 0.4506
3000 : USD 0.4346

114945 - WHS 4


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 1500
Multiples : 1500
1500 : USD 0.4406
3000 : USD 0.42
7500 : USD 0.4159
9000 : USD 0.4117
10500 : USD 0.4114

2828 - WHS 5


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 18
Multiples : 1
18 : USD 0.5148
25 : USD 0.5097
100 : USD 0.481
250 : USD 0.4762
500 : USD 0.4715
1000 : USD 0.4384

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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PSMN012-60YS N-channel LFPAK 60 V, 11.1 m standard level MOSFET Rev. 01 5 January 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current T =25C V =10V --59 A D mb GS see Figure 1 P total power T = 25 C see Figure 2 --89 W tot mb dissipation T junction temperature -55 - 175 C j Avalanche ruggedness E non-repetitive V =10V T =25C --71 mJ DS(AL)S GS j(init) drain-source I =59 A V 60 V D sup avalanche energy R =50 GS Dynamic characteristics Q gate-drain charge V =10V I =30A -6.4 -nC GD GS D V = 30 V see Figure 14 and 15 DS Q total gate charge - 28.4 - nC G(tot)Nexperia PSMN012-60YS N-channel LFPAK 60 V, 11.1 m standard level MOSFET Table 1. Quick reference continued Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V =10V I =15A - - 17.8 m DSon GS D on-state resistance T = 100 C see Figure 12 j V =10V I =15 A T =25C -8 11.1m GS D j see Figure 13 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN012-60YS LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 PSMN012-60YS 1 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 01 5 January 2010 2 of 15 Nexperia B.V. 2017. All rights reserved

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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