Product Information

PSMN020-100YS

PSMN020-100YS electronic component of Nexperia

Datasheet
MOSFET, N CH, 100V, 43A, SOT669
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5271 ea
Line Total: USD 1.53

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

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PSMN020-100YS
Nexperia

1 : USD 1.3842
10 : USD 1.0922
100 : USD 0.8032
500 : USD 0.7129
1000 : USD 0.6433

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Current Id Max
Operating Temperature Min
Operating Temperature Range
Voltage Vgs Max
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Additional Infomation About Product

PSMN020-100YS N-channel 100V 20.5m standard level MOSFET in LFPAK 26 March 2014 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package 3. Applications DC-to-DC converters Lithium-ion battery protection Load switching Motor control Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T = 25 C V = 10 V Fig. 2 - - 43 A D mb GS P total power dissipation T = 25 C Fig. 1 - - 106 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 15 A T = 100 C - - 37 m DSon GS D j resistance Fig. 13 V = 10 V I = 15 A T = 25 C - 15 20.5 m GS D j Fig. 14 Dynamic characteristics Q gate-drain charge V = 10 V I = 30 A V = 50 V - 11.8 16.5 nC GD GS D DS Fig. 15 Fig. 16 Q total gate charge - 41 57.4 nC G(tot) Scan or click this QR code to view the latest information for this product LFPAK56NXP Semiconductors PSMN020-100YS N-channel 100V 20.5m standard level MOSFET in LFPAK Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 43 A - - 103 mJ DS(AL)S GS j(init) D source avalanche V 100 V unclamped R = 50 sup GS energy Fig. 4 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN020-100YS LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN020-100YS 20100 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 175 C T 25 C R = 20 k - 100 V DGR j j GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 106 W tot mb PSMN020-100YS All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 26 March 2014 2 / 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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