Product Information

PSMN021-100YL

PSMN021-100YL electronic component of Nexperia

Datasheet
MOSFET, N-CH, 100V, 49A, SOT-669-4
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.4021 ea
Line Total: USD 1.4

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

PSMN021-100YL
Nexperia

1 : USD 1.3842
10 : USD 1.1007
100 : USD 0.8771
500 : USD 0.749
1000 : USD 0.5375
5000 : USD 0.5325

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Product Range
Automotive Qualification Standard
Msl
Svhc
LoadingGif

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Additional Infomation About Product

PSMN021-100YL N-channel 100 V, 21 m logic level MOSFET in LFPAK56 2 June 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low R and low gate charge DSon Logic level gate operation Avalanche rated, 100 % tested LFPAK provides maximum power density in a Power SO8 package 3. Applications Synchronous rectification in power supply equipment Chargers & adaptors with V < 10 V out Fast charge & USB-PD applications Battery powered motor control LED lighting & TV backlight 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 100 V DS j I drain current V = 5 V T = 25 C Fig. 2 - - 49 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 147 W tot mb Static characteristics R drain-source on-state V = 5 V I = 15 A T = 25 C Fig. 11 - 17.4 22 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge I = 15 A V = 80 V V = 5 V - 13.3 - nC GD D DS GS T = 25 C Fig. 13 Fig. 14 j Scan or click this QR code to view the latest information for this productNXP Semiconductors PSMN021-100YL N-channel 100 V, 21 m logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN021-100YL LFPAK56 Plastic single-ended surface-mounted package SOT669 Power-SO8 (LFPAK56 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN021-100YL 21L100 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 100 V DS j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 147 W tot mb I drain current V = 5 V T = 25 C Fig. 2 - 49 A D GS mb V = 5 V T = 100 C Fig. 2 - 35 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 197 A DM p mb T storage temperature -55 175 C stg PSMN021-100YL All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2016. All rights reserved Product data sheet 2 June 2016 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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