PSMN013-80YS,115 Nexperia

PSMN013-80YS N-channel LFPAK 80 V 12.9 m standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 150C --80 V DS j j I drain current T =25C V = 10 V see Figure 1 --60 A D mb GS P total power dissipation T = 25 C see Figure 2 - - 106 W tot mb T junction temperature -55 - 175 C j Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =55A V 80 V --70 mJ DS(AL)S GS j(init) D sup avalanche energy R =50 unclamped GS Dynamic characteristics Q gate-drain charge V =10V I =25A V =40V see Figure 14 -8 -nC GD GS D DS see Figure 15 Q total gate charge V =10V I =25A V =40V see Figure 14 -37 -nC G(tot) GS D DS see Figure 15 Static characteristics R drain-source on-state V =10V I =15A T = 100 C see Figure 12 - - 19.8 m DSon GS D j resistance V =10V I =15A T = 25 C see Figure 13 - 9.7 12.9 m GS D jNexperia PSMN013-80YS N-channel LFPAK 80 V 12.9 m standard level MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN013-80YS LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 150 C - 80 V DS j j V drain-gate voltage T 25 C T 150 C R =20k -80 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T = 100 C see Figure 1 -42 A D GS mb V =10V T =25C see Figure 1 -60 A GS mb I peak drain current t 10 s pulsed T =25C see Figure 3 -233 A DM p mb P total power dissipation T =25C see Figure 2 -106 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering -260 C sld(M) temperature Source-drain diode I source current T =25C - 60 A S mb I peak source current t 10 s pulsed T =25C - 233 A SM p mb Avalanche ruggedness E non-repetitive V =10V T =25C I =55A V 80 V -70 mJ DS(AL)S GS j(init) D sup drain-source avalanche R =50 unclamped GS energy Nexperia B.V. 2017. All rights reserved PSMN013-80YS 1 Product data sheet Rev. 01 25 June 2009 2 of 13