PSMN017-30PL,127 Nexperia

PSMN017-30PL,127 electronic component of Nexperia
PSMN017-30PL,127 Nexperia
PSMN017-30PL,127 MOSFETs
PSMN017-30PL,127  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN017-30PL,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN017-30PL,127 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN017-30PL,127
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-chan 30 V 17 mohm MOSFET in TO-220
Datasheet: PSMN017-30PL,127 Datasheet (PDF)
Price (USD)
362: USD 1.2954 ea
Line Total: USD 468.93 
Availability : 3681
  
Ship by Fri. 24 Oct to Thu. 30 Oct
QtyUnit Price
362$ 1.2954
500$ 1.1658
1000$ 1.0751
10000$ 0.9586
100000$ 0.8031

Availability 3681
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 362
Multiples : 1
QtyUnit Price
362$ 1.2954
500$ 1.1658
1000$ 1.0751
10000$ 0.9586
100000$ 0.8031


Availability 27
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.61
3$ 1.428
10$ 1.288
16$ 1.274
42$ 1.204

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
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Technology
Number of Channels
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
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Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN017-30PL,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN017-30PL,127 and other electronic components in the MOSFETs category and beyond.

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PSMN017-30PL N-channel 30 V 17 m logic level MOSFET in TO220 Rev. 2 3 April 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --30 V DS j j 1 I drain current T =25 C V = 10 V see Figure 1 --32 A D mb GS P total power dissipation T = 25 C see Figure 2 --45 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =4.5 V I =10A T =25C - 18.7 23.4 m DSon GS D j resistance see Figure 13 =10V I =10A T =25C - 13.4 17 m V GS D j see Figure 13 Dynamic characteristics Q gate-drain charge V =4.5 V I =10A V =15V -1.94-nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge V =4.5 V I =10A V =15V -5.1 -nC G(tot) GS D DS see Figure 14 see Figure 15 Avalanche ruggedness non-repetitive drain-source V =10V T =25 C I =32A --13 mJ E DS(AL)S GS j(init) D avalanche energy V 30 V R =50 unclamped sup GS 1 Continuous current is limited by package.PSMN017-30PL Nexperia N-channel 30 V 17 m logic level MOSFET in TO220 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN017-30PL TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 30 V DS j j V drain-gate voltage T 25 C T 175 C R =20k -30 V DGR j j GS V gate-source voltage -20 20 V GS 1 I drain current V =10V T = 100 C see Figure 1 - 26.9 A D GS mb 1 V =10V T =25C see Figure 1 -32 A GS mb I peak drain current pulsed t 10 s T =25 C see Figure 3 - 152 A DM p mb P total power dissipation T =25C see Figure 2 -45 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 32 A S mb I peak source current pulsed t 10 s T = 25 C - 152 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =32A -13 mJ DS(AL)S GS j(init) D avalanche energy V 30 V R =50 unclamped sup GS 1 Continuous current is limited by package. PSMN017-30PL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 3 April 2012 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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