X-On Electronics has gained recognition as a prominent supplier of PSMN1R1-30PL,127 MOSFET across the USA, India, Europe, Australia, and various other global locations. PSMN1R1-30PL,127 MOSFET are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

PSMN1R1-30PL,127 Nexperia

PSMN1R1-30PL,127 electronic component of Nexperia
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See Product Specifications
Part No.PSMN1R1-30PL,127
Manufacturer: Nexperia
Category: MOSFET
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W; TO220AB
Datasheet: PSMN1R1-30PL,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.117 ea
Line Total: USD 4.12

Availability - 2699
Ships to you between
Thu. 27 Jun to Mon. 01 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4525 - WHS 1


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 1
Multiples : 1
1 : USD 5.774
10 : USD 4.6559
100 : USD 3.7687
500 : USD 3.2256
1000 : USD 3.0712

2699 - WHS 2


Ships to you between Thu. 27 Jun to Mon. 01 Jul

MOQ : 1
Multiples : 1
1 : USD 4.117
10 : USD 3.496
50 : USD 3.496
100 : USD 2.9095
250 : USD 2.898
500 : USD 2.6565
1000 : USD 2.3115
5000 : USD 2.2885

38 - WHS 3


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 1
Multiples : 1
1 : USD 5.304
3 : USD 4.758
5 : USD 3.913
12 : USD 3.705

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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PSMN1R1-30PL N-channel 30 V 1.3 m logic level MOSFET in TO-220 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources 3. Applications DC-to-DC converters Load switiching Motor control Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 30 V DS j j I drain current T = 25 C V = 10 V Fig. 2 1 - - 120 A D mb GS P total power dissipation T = 25 C Fig. 1 - - 338 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C 2 - 1.1 1.3 m DSon GS D j resistance Fig. 12 V = 10 V I = 25 A T = 100 C - 1.5 1.8 m GS D j Fig. 13 Dynamic characteristics Q gate-drain charge V = 4.5 V I = 75 A V = 15 V - 37 - nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge - 118 - nC G(tot)Nexperia PSMN1R1-30PL N-channel 30 V 1.3 m logic level MOSFET in TO-220 Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 120 A - - 1.9 J DS(AL)S GS j(init) D source avalanche V 30 V R = 50 unclamped sup GS energy 1 Continuous current is limited by package. 2 Measured 3 mm from package. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to drain 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R1-30PL TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 7. Marking Table 4. Marking codes Type number Marking code PSMN1R1-30PL PSMN1R1-30PL PSMN1R1-30PL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 2 April 2014 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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