PSMN1R2-30YLC,115 Nexperia

PSMN1R2-30YLC,115 electronic component of Nexperia
PSMN1R2-30YLC,115 Nexperia
PSMN1R2-30YLC,115 MOSFETs
PSMN1R2-30YLC,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN1R2-30YLC,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN1R2-30YLC,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN1R2-30YLC,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-Ch 30V 1.25mOhms
Datasheet: PSMN1R2-30YLC,115 Datasheet (PDF)
Price (USD)
1: USD 1.7875 ea
Line Total: USD 1.79 
Availability : 0
  
QtyUnit Price
1$ 1.7875
10$ 1.1292
100$ 0.7755
500$ 0.6611
1000$ 0.6336
1500$ 0.572
3000$ 0.5489

Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.6191
3000$ 0.5994


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.5428


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.3036
10$ 1.1552
100$ 0.9132
500$ 0.7082


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0588
10$ 1.0413
100$ 0.936
250$ 0.8365
1000$ 0.7313


Availability 0
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.7875
10$ 1.1292
100$ 0.7755
500$ 0.6611
1000$ 0.6336
1500$ 0.572
3000$ 0.5489


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.6721


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.4411
10$ 1.23
30$ 1.1157
100$ 0.986
500$ 0.9279
1500$ 0.9008


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 100
Multiples : 1
QtyUnit Price
100$ 0.9657


Availability 0
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.7368
5$ 1.5741
14$ 1.1724
37$ 1.1072

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN1R2-30YLC,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN1R2-30YLC,115 and other electronic components in the MOSFETs category and beyond.

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PSMN1R2-30YLC N-channel 30 V 1.25m logic level MOSFET in LFPAK using NextPower technology Rev. 1 3 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, Ultra low QG, QGD, and QOSS for qualified to 175C high system efficiencies at low and high loads Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low Rdson and low parasitic inductance 1.3 Applications DC-to-DC converters Power OR-ing Lithium-ion battery protection Server power supplies Load switching Sync rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175C --30 V DS j 1 I drain current T =25C V =10V --100A D mb GS see Figure 1 P total power dissipation T =25C see Figure 2 --215W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =4.5 V I =25A - 1.35 1.65 m DSon GS D resistance T =25C j see Figure 12 V =10V I =25A - 1.05 1.25 m GS D T =25C j see Figure 12PSMN1R2-30YLC Nexperia N-channel 30 V 1.25m logic level MOSFET in LFPAK using NextPower Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =4.5 V I =25A -11.6-nC GD GS D V =15V see Figure 14 DS see Figure 15 Q total gate charge V =4.5 V I =25A -38 -nC G(tot) GS D V =15V see Figure 14 DS see Figure 15 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base 1234 connected to drain SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R2-30YLC LFPAK plastic single-ended surface-mounted package 4 leads SOT669 Power-SO8 4. Marking Table 4. Marking codes 1 Type number Marking code PSMN1R2-30YLC 1C230L 1 % = placeholder for manufacturing site code PSMN1R2-30YLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 3 May 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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