PSMN1R2-25YLC,115 Nexperia

PSMN1R2-25YLC,115 electronic component of Nexperia
PSMN1R2-25YLC,115 Nexperia
PSMN1R2-25YLC,115 MOSFETs
PSMN1R2-25YLC,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN1R2-25YLC,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN1R2-25YLC,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN1R2-25YLC,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-Ch 25V 1.3 mOhms
Datasheet: PSMN1R2-25YLC,115 Datasheet (PDF)
Price (USD)
1500: USD 0.5591 ea
Line Total: USD 838.65 
Availability : 4365
  
Ship by Mon. 27 Oct to Fri. 31 Oct
QtyUnit Price
1500$ 0.5591

Availability 1419
Ship by Thu. 23 Oct to Mon. 27 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.61
5$ 1.2852
10$ 1.1144
24$ 0.8078
66$ 0.7644


Availability 31
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.7564
10$ 1.4558
30$ 0.9769
100$ 0.7779
500$ 0.7178
1500$ 0.6877


Availability 4365
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.5591

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN1R2-25YLC,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN1R2-25YLC,115 and other electronic components in the MOSFETs category and beyond.

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PSMN1R2-25YLC N-channel 25 V 1.3 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, Ultra low QG, QGD and QOSS for high qualified to 175C system efficiencies at low and high loads Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low Rdson and low parasitic inductance 1.3 Applications DC-to-DC converters Power OR-ing Lithium-ion battery protection Server power supplies Load switching Sync rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 25 V DS j 1 I drain current T =25 C V =10V --100A D mb GS see Figure 1 P total power dissipation T = 25 C see Figure 2 --179W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =4.5 V I =25A -1.351.7 m DSon GS D resistance T =25C j see Figure 12 V =10V I =25A -1.051.3 m GS D T =25C j see Figure 12PSMN1R2-25YLC Nexperia N-channel 25 V 1.3 m logic level MOSFET in LFPAK using NextPower Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =4.5 V I =25A -8.3 -nC GD GS D V =12 V see Figure 14 DS see Figure 15 Q total gate charge V =4.5 V I =25A -31 -nC G(tot) GS D V =12 V see Figure 15 DS see Figure 14 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base 1234 connected to drain SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R2-25YLC LFPAK plastic single-ended surface-mounted package 4 leads SOT669 Power-SO8 4. Marking Table 4. Marking codes 1 Type number Marking code PSMN1R2-25YLC 1C225L 1 % = placeholder for manufacturing site code. PSMN1R2-25YLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 2 May 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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