PSMN1R3-30YL,115 Nexperia

PSMN1R3-30YL,115 electronic component of Nexperia
PSMN1R3-30YL,115 Nexperia
PSMN1R3-30YL,115 MOSFETs
PSMN1R3-30YL,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN1R3-30YL,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN1R3-30YL,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN1R3-30YL,115
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET N-CH 30V 1.3 mOhm Logic Level MOSFET
Datasheet: PSMN1R3-30YL,115 Datasheet (PDF)
Price (USD)
1: USD 2.6 ea
Line Total: USD 2.6 
Availability : 0
  
QtyUnit Price
1$ 2.6
10$ 1.824
100$ 1.298
500$ 1.221
1000$ 1.122
1500$ 0.9141

Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.5859
3000$ 0.5701


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.8846
10$ 1.8439
30$ 1.8188
100$ 1.7918


Availability 0
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.6
10$ 1.824
100$ 1.298
500$ 1.221
1000$ 1.122
1500$ 0.9141


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 298
Multiples : 1
QtyUnit Price
298$ 1.5781
500$ 1.4263
1000$ 1.3154
10000$ 1.1726
100000$ 0.9825


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 1.1374


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 600
Multiples : 1
QtyUnit Price
600$ 0.4337
610$ 0.4265


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 298
Multiples : 1
QtyUnit Price
298$ 1.5781
500$ 1.4263
1000$ 1.3154
10000$ 1.1726
100000$ 0.9825


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 298
Multiples : 1
QtyUnit Price
298$ 1.5781
500$ 1.4263
1000$ 1.3154
10000$ 1.1726
100000$ 0.9825

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN1R3-30YL,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN1R3-30YL,115 and other electronic components in the MOSFETs category and beyond.

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PSMN1R3-30YL N-channel 30 V 1.3 m logic level MOSFET in LFPAK Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power convertors density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 150 C - - 30 V DS j j I drain current T =25C V =10V 1 - - 100 A D mb GS see Figure 1 P total power T = 25 C see Figure 2 - - 121 W tot mb dissipation T junction temperature -55 - 150 C j Avalanche ruggedness E non-repetitive V =10V T =25C - - 383 mJ DS(AL)S GS j(init) drain-source I = 100 A V 30 V D sup avalanche energy R =50 unclamped GS Dynamic characteristics Q gate-drain charge V = 4.5 V I =25A -9.3 -nC GD GS D V = 12 V see Figure 13 DS Q total gate charge - 46.6 - nC G(tot) see Figure 14Nexperia PSMN1R3-30YL N-channel 30 V 1.3 m logic level MOSFET in LFPAK Table 1. Quick reference continued Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V =10V I =15A --1.8 m DSon GS D on-state resistance T = 100 C see Figure 12 j V =10V I =15A - 1.04 1.3 m GS D T = 25 C see Figure 17 j 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source D 2S source 3S source G 4G gate mbb076 S mb D mounting base connected to drain 142 3 SOT1023 (LFPAK2) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R3-30YL LFPAK2 Plastic single-ende surface-mounted package (LFPAK2) 4 leads SOT1023 Nexperia B.V. 2017. All rights reserved PSMN1R3-30YL 2 Product data sheet Rev. 02 25 June 2009 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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