PSMN2R2-30YLC,115 Nexperia

PSMN2R2-30YLC,115 electronic component of Nexperia
PSMN2R2-30YLC,115 Nexperia
PSMN2R2-30YLC,115 MOSFETs
PSMN2R2-30YLC,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN2R2-30YLC,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN2R2-30YLC,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN2R2-30YLC,115
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET N-Ch 30V 2.15mOhms
Datasheet: PSMN2R2-30YLC,115 Datasheet (PDF)
Price (USD)
1: USD 1.8875 ea
Line Total: USD 1.89 
Availability : 0
  
QtyUnit Price
1$ 1.8875
10$ 1.044
100$ 0.6908
500$ 0.5456
1000$ 0.4917
1500$ 0.4499
3000$ 0.4059
9000$ 0.3938

Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.428
3000$ 0.4212
4500$ 0.4184
7500$ 0.4137


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.6585
10$ 1.0811
100$ 1.0156
500$ 0.9135
1000$ 0.8505
5000$ 0.7772


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.778
10$ 0.7722
125$ 0.6961
750$ 0.5616


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7031
10$ 0.6876
30$ 0.678
100$ 0.6663


Availability 0
Ship by Wed. 19 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.8875
10$ 1.044
100$ 0.6908
500$ 0.5456
1000$ 0.4917
1500$ 0.4499
3000$ 0.4059
9000$ 0.3938

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN2R2-30YLC,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN2R2-30YLC,115 and other electronic components in the MOSFETs category and beyond.

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PSMN2R2-30YLC N-channel 30 V 2.15m logic level MOSFET in LFPAK using NextPower technology Rev. 02 3 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, Optimised for 4.5V Gate drive utilising qualified to 175C NextPower Superjunction technology Low parasitic inductance and Ultra low QG, QGD, and QOSS for resistance high system efficiencies at low and high loads 1.3 Applications DC-to-DC converters Power OR-ing Lithium-ion battery protection Server power supplies Load switching Sync rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175C --30 V DS j 1 I drain current T =25C V =10V --100A D mb GS see Figure 1 P total power dissipation T =25C see Figure 2 --141W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =4.5 V I =25A -2.3 2.8 m DSon GS D resistance T =25 C see Figure 12 j =10V I =25A - 1.8 2.15 m V GS D T =25 C see Figure 12 jPSMN2R2-30YLC Nexperia N-channel 30 V 2.15m logic level MOSFET in LFPAK using NextPower Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =4.5 V I =25A -8 -nC GD GS D V = 15 V see Figure 14 DS see Figure 15 Q total gate charge V =4.5 V I =25A -26 -nC G(tot) GS D V = 15 V see Figure 14 DS see Figure 15 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 1234 SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R2-30YLC LFPAK Power-SO8 plastic single-ended surface-mounted package 4 leads SOT669 4. Marking Table 4. Marking codes 1 Type number Marking code PSMN2R2-30YLC 2C230L 1 % = placeholder for manufacturing site code PSMN2R2-30YLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 3 May 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
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