Product Information

PSMN2R0-60ES,127

PSMN2R0-60ES,127 electronic component of Nexperia

Datasheet
MOSFET N-Ch 60V 2.2 mOhms
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 2.2445
10 : USD 1.9689
100 : USD 1.7048
250 : USD 1.6196
500 : USD 1.5522
1000 : USD 1.5211
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 4.2553
50 : USD 3.4202
100 : USD 3.1162
500 : USD 2.5233
1000 : USD 2.1281
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 4.1299
10 : USD 2.7999
100 : USD 2.4972
250 : USD 2.2799
500 : USD 2.0858
1000 : USD 1.8069
2500 : USD 1.8069
5000 : USD 1.7705
10000 : USD 1.722
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

PSMN2R0-60ES N-channel 60 V 2.2 m standard level MOSFET in I2PAK Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j 1 I drain current T =25C V =10V --120A D mb GS see Figure 1 total power dissipation T =25C see Figure 2 --338W P tot mb junction temperature -55 - 175 C T j Static characteristics 2 drain-source on-state V =10V I =25A -1.8 2.2 m R DSon GS D resistance T =25 C see Figure 12 j V =10V I =25A -3 3.5 m GS D T = 100 C see Figure 12 j see Figure 13 Dynamic characteristics Q gate-drain charge V =10V I =75A -32 -nC GD GS D V = 30 V see Figure 14 DS total gate charge - 137 - nC Q G(tot) see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C --913mJ DS(AL)S GS j(init) drain-source avalanche I = 120 A V 60 V D sup energy R =50 Unclamped GSPSMN2R0-60ES Nexperia N-channel 60 V 2.2 m standard level MOSFET in I2PAK 1 Continuous current limited by package. 2 Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R0-60ES I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 PSMN2R0-60ES All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 19 April 2011 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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