Product Information

PSMN3R3-40YS

PSMN3R3-40YS electronic component of Nexperia

Datasheet
MOSFET,N CH,40V,100A,LFPAK
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 1.207 ea
Line Total: USD 120.7

0 - Global Stock
MOQ: 100  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 100
Multiples : 1

Stock Image

PSMN3R3-40YS
Nexperia

100 : USD 1.207
500 : USD 0.947
1000 : USD 0.7456

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Current Id Max
Operating Temperature Min
Operating Temperature Range
Voltage Vgs Max
LoadingGif

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Additional Infomation About Product

PSMN3R3-40YS N-channel LFPAK 40 V 3.3 m standard level MOSFET Rev. 04 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications DC-to-DC convertors Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --40 V DS j j I drain current T =25C V =10V --100A D mb GS see Figure 1 P total power dissipation T = 25 C see Figure 2 --117W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =25A --4.5 m DSon GS D resistance T = 100 C see Figure 12 j V =10V I =25A -2.6 3.3 m GS D T =25C see Figure 13 jPSMN3R3-40YS NXP Semiconductors N-channel LFPAK 40 V 3.3 m standard level MOSFET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =10V I =25A -11.2- nC GD GS D V =20 V see Figure 14 DS Q total gate charge - 49 - nC G(tot) see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C --162mJ DS(AL)S GS j(init) drain-source avalanche I =100 A V 40 V D sup energy unclamped R =50 GS 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source D mb 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R3-40YS LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 PSMN3R3-40YS All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 25 October 2010 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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