PSMN3R7-100BSEJ Nexperia

PSMN3R7-100BSE N-channel 100 V, 3.95 m, standard level MOSFET in D2PAK 3 September 2018 Product data sheet 1. General description Standard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualified to 175 C. Part of Nexperia sNextPower Liv portfolio, the PSMN3R7-100BSE delivers very low R and a very strong linear-mode (SOA) performance. DSon PSMN3R7-100BSE complements the latesthot-swa controllers - robust enough to withstand 2 substantial inrush currents during turn on, low R to minimize I R losses and deliver optimum DSon efficiency when turned fully ON. 2. Features and benefits Fully optimized Safe Operating Area (SOA) for superior linear mode operation 2 Low R for low I R conduction losses DSon 3. Applications Hot swap Load switch Soft start E-fuse Telecommunication systems based on a 48 V backplane/supply rail 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 100 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 120 A D GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - - 780 A DM p mb P total power dissipation T = 25 C Fig. 1 - - 405 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 3.36 3.95 m DSon GS D j resistance Fig. 12 Dynamic characteristics Q gate-drain charge I = 25 A V = 50 V V = 10 V - 45.2 77 nC GD D DS GS Fig. 14 Fig. 15 Q total gate charge - 176 246 nC G(tot) Avalanche ruggedness E non-repetitive drain- I = 120 A V 100 V R = 50 - - 542 mJ DS(AL)S D sup GS source avalanche V = 10 V T = 25 C unclamped GS j(init) energy Fig. 4 1 Continuous current is limited by packageNexperia PSMN3R7-100BSE N-channel 100 V, 3.95 m, standard level MOSFET in D2PAK 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 G gate D 2 D drain 1 G 3 S source mb D mounting base connected to mbb076 S 2 drain 1 3 D2PAK (SOT404) 1 It is not possible to make connection to pin 2. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R7-100BSE D2PAK plastic, single-ended surface-mounted package (D2PAK) 3 SOT404 terminals (one lead cropped) 2.54 mm pitch 11 mm x 10 mm x 4.3 mm body 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 100 V DS j V drain-gate voltage 25 C T 175 C R = 20 k - 100 V DGR j GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 405 W tot mb I drain current V = 10 V T = 25 C Fig. 2 1 - 120 A D GS mb V = 10 V T = 100 C Fig. 2 1 - 120 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 780 A DM p mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering - 260 C sld(M) temperature Source-drain diode I source current T = 25 C - 120 A S mb I peak source current pulsed t 10 s T = 25 C - 780 A SM p mb Avalanche ruggedness E non-repetitive drain- I = 120 A V 100 V R = 50 - 542 mJ DS(AL)S D sup GS source avalanche energy V = 10 V T = 25 C unclamped GS j(init) Fig. 4 1 Continuous current is limited by package PSMN3R7-100BSE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 3 September 2018 2 / 12