X-On Electronics has gained recognition as a prominent supplier of PSMN3R8-100BS,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN3R8-100BS,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN3R8-100BS,118 Nexperia

PSMN3R8-100BS,118 electronic component of Nexperia
PSMN3R8-100BS,118 Nexperia
PSMN3R8-100BS,118 MOSFETs
PSMN3R8-100BS,118  Semiconductors

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Part No. PSMN3R8-100BS,118
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET Std N-chanMOSFET
Datasheet: PSMN3R8-100BS,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
800: USD 1.6313 ea
Line Total: USD 1305.04 
Availability - 2328
Ship by Fri. 06 Jun to Thu. 12 Jun
MOQ: 800  Multiples: 800
Pack Size: 800
Availability Price Quantity
2328
Ship by Fri. 06 Jun to Thu. 12 Jun
MOQ : 800
Multiples : 800
800 : USD 1.6313

1517
Ship by Wed. 04 Jun to Fri. 06 Jun
MOQ : 1
Multiples : 1
1 : USD 3.5625
10 : USD 2.507
100 : USD 2.002
500 : USD 1.738
800 : USD 1.727

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the PSMN3R8-100BS,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN3R8-100BS,118 and other electronic components in the MOSFETs category and beyond.

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PSMN3R8-100BS N-channel 100 V 3.9 m standard level MOSFET in D2PAK Rev. 2 29 February 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j 1 I drain current T =25C V =10V see Figure 1 --120 A D mb GS P total power dissipation T =25C see Figure 2 --306 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =25A T = 100 C -5.9 6.9 m DSon GS D j resistance see Figure 12 see Figure 13 =10V I =25A T =25C - 3.28 3.9 m V GS D j see Figure 12 see Figure 13 Dynamic characteristics Q gate-drain charge V =10V I =75A V =50V -49 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 170 - nC G(tot) Avalanche ruggedness E non-repetitive V =10V T =25C I =120 A --537 mJ DS(AL)S GS j(init) D drain-source V 100 V R =50 Unclamped sup GS avalanche energy 1 Continuous current is limited by package.PSMN3R8-100BS Nexperia N-channel 100 V 3.9 m standard level MOSFET in D2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R8-100BS D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 25 C T 175 C R =20k -100V DGR j j GS V gate-source voltage -20 20 V GS 1 I drain current V =10V T = 100 C see Figure 1 -120A D GS j 1 V =10V T =25C see Figure 1 -120A GS mb I peak drain current pulsed t 10 s T =25C see Figure 3 -680A DM p mb P total power dissipation T =25C see Figure 2 -306W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode 1 I source current T =25C -120A S mb I peak source current pulsed t 10 s T =25C - 680 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I = 120 A -537mJ DS(AL)S GS j(init) D avalanche energy V 100 V R =50 Unclamped sup GS 1 Continuous current is limited by package. PSMN3R8-100BS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 29 February 2012 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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