Product Information

PSMN7R8-120PSQ

PSMN7R8-120PSQ electronic component of Nexperia

Datasheet
MOSFET N-channel 120V 7.9mo FET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

197: USD 2.2184 ea
Line Total: USD 437.02

0 - Global Stock
MOQ: 197  Multiples: 197
Pack Size: 197

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 5000
Multiples : 1

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PSMN7R8-120PSQ
Nexperia

5000 : USD 2.6091

0 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 197
Multiples : 197

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PSMN7R8-120PSQ
Nexperia

197 : USD 2.1363

0 - WHS 3


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 5000
Multiples : 5000

Stock Image

PSMN7R8-120PSQ
Nexperia

5000 : USD 2.5564

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Additional Infomation About Product

PSMN7R8-120PS N-channel 120V 7.9m standard level MOSFET in TO220 25 January 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 2. Features and benefits High efficiency due to low switching and conduction losses TO220 package Suitable for standard level gate drive 3. Applications AC-to-DC power supply Synchronous rectification Motor control 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 120 V DS j j I drain current T = 25 C V = 10 V Fig. 1 - - 70 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 349 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C 4.7 6.72 7.9 m DSon GS D j resistance Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 60 V - 50.5 - nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge - 167 - nC G(tot) Avalanche ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 70 A - - 386 mJ DS(AL)S GS j(init) D source avalanche V 120 V unclamped R = 50 sup GS energy Fig. 3Nexperia PSMN7R8-120PS N-channel 120V 7.9m standard level MOSFET in TO220 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D drain 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN7R8-120PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 7. Marking Table 4. Marking codes Type number Marking code PSMN7R8-120PS PSMN7R8-120PS 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 120 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 120 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C Fig. 1 - 70 A D GS mb V = 10 V T = 100 C Fig. 1 - 70 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 4 - 280 A DM p mb PSMN7R8-120PS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 25 January 2013 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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