PSMN8R7-80BS Nexperia

PSMN8R7-80BS N-channel 80 V 8.7 m standard level MOSFET in D2PAK Rev. 2 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --80 V DS j j I drain current T =25C V =10V see Figure 1 --90 A D mb GS P total power dissipation T =25C see Figure 2 --170 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =10A T = 100 C --14 m DSon GS D j resistance see Figure 12 =10V I =10A T =25C -7.5 8.7 m V GS D j see Figure 13 Dynamic characteristics Q gate-drain charge V =10V I =25A V =40V -11 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 52 - nC G(tot) Avalanche ruggedness E non-repetitive V =10V T =25C I =90A --120 mJ DS(AL)S GS j(init) D drain-source V 80 V R =50 unclamped sup GS avalanche energy D2PAKPSMN8R7-80BS NXP Semiconductors N-channel 80 V 8.7 m standard level MOSFET in D2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN8R7-80BS D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 80 V DS j j V drain-gate voltage T 25 C T 175 C R =20k -80 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T = 100 C see Figure 1 -64 A D GS mb V =10V T =25C see Figure 1 -90 A GS mb I peak drain current pulsed t 10 s T =25C - 361 A DM p mb see Figure 3 P total power dissipation T =25C see Figure 2 - 170 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode I source current T =25C - 90 A S mb I peak source current pulsed t 10 s T = 25 C - 361 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =90A - 120 mJ DS(AL)S GS j(init) D avalanche energy V 80 V R =50 unclamped sup GS PSMN8R7-80BS All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 2 March 2012 2 of 14