PSMN9R5-100PS Nexperia

PSMN9R5-100PS N-channel 100 V 9.6 m standard level MOSFET in T0220 17 October 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive 3. Applications DC-to-DC converters Load switching Motor control Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T = 25 C V = 10 V Fig. 1 - - 89 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 211 W tot mb Static characteristics R drain-source on-state V = 10 V I = 15 A T = 25 C - 8.16 9.6 m DSon GS D j resistance Fig. 13 Dynamic characteristics Q gate-drain charge V = 10 V I = 60 A V = 50 V - 23 - nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge - 82 - nC G(tot) Avalanche ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 89 A - - 177 mJ DS(AL)S GS j(init) D source avalanche V 100 V unclamped R = 50 sup GS energy Scan or click this QR code to view the latest information for this product TO-220ABNXP Semiconductors PSMN9R5-100PS N-channel 100 V 9.6 m standard level MOSFET in T0220 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to drain 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN9R5-100PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 7. Marking Table 4. Marking codes Type number Marking code PSMN9R5-100PS PSMN9R5-100PS 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 175 C T 25 C R = 20 k - 100 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V = 10 V T = 100 C Fig. 1 - 63 A D GS mb V = 10 V T = 25 C Fig. 1 - 89 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 355 A DM p mb PSMN9R5-100PS All information provided in this document is subject to legal disclaimers. NXP N.V. 2013. All rights reserved Product data sheet 17 October 2013 2 / 13