Product Information

PSMN9R5-100XS

PSMN9R5-100XS electronic component of NXP

Datasheet
MOSFET, N-CH, 100V, 44.2A, TO220F
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5624 ea
Line Total: USD 1.56

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 1.5624
10 : USD 1.3797
25 : USD 1.2348
100 : USD 1.0773
250 : USD 0.9954
500 : USD 0.9639

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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Additional Infomation About Product

PSMN9R5-100XS N-channel 100V 9.6 m standard level MOSFET in TO220F (SOT186A) Rev. 3 6 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Isolated package and conduction losses Suitable for standard level gate drive 1.3 Applications AC-to-DC power supply equipment Server power supplies Motor control Synchronous rectification 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T =25 C V =10V see Figure 1 - - 44.2 A D mb GS P total power dissipation T =25 C see Figure 2 - - 52.6 W tot mb Static characteristics R drain-source on-state V =10V I =10A T =25C - 8.15 9.6 m DSon GS D j resistance see Figure 12 see Figure 13 Dynamic characteristics Q gate-drain charge V =10V I =10A V =50V - 24.3 - nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 81.5 - nC G(tot) Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =44.2A - - 260 mJ DS(AL)S GS j(init) D avalanche energy V 100 V unclamped R =50 sup GS see Figure 3 TO-220FPSMN9R5-100XS NXP Semiconductors N-channel 100V 9.6 m standard level MOSFET in TO220F (SOT186A) 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb mounting base isolated mbb076 S 1 2 3 SOT186A (TO-220F) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN9R5-100XS TO-220F plastic single-ended package isolated heatsink mounted SOT186A 1 mounting hole 3-lead TO-220full pac PSMN9R5-100XS All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 3 6 March 2012 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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