Product Information

2N2222A

2N2222A electronic component of NTE

Datasheet
BIPOLAR TRANSISTOR, NPN, 40V, TO-18

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

40: USD 0.9261 ea
Line Total: USD 37.04

0 - Global Stock
MOQ: 40  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 50
Multiples : 1
50 : USD 0.7704
250 : USD 0.7547
1000 : USD 0.7402
2500 : USD 0.7245
5000 : USD 0.7101
7500 : USD 0.6943
10000 : USD 0.6799
15000 : USD 0.6576

0 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 3.2774
10 : USD 2.8465
25 : USD 2.683
100 : USD 2.2875
250 : USD 2.0672
500 : USD 1.8026

     
Manufacturer
Product Category
Brand
Transistor Polarity
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
LoadingGif

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NTE123A (NPN) & NTE159M (PNP) Silicon Complementary Transistors General Purpose Description: The NTE123A (NPN) and NTE159M (PNP) are widely used Industry Standard complementary transis- tors in a TO18 type case designed for applications such as mediumspeed switching and amplifiers from audio to VHF frequencies. Features: Low Collector Saturation Voltage: 1V (Max) High Current GainBandwidth Product: f = 300MHz (Min) I 20mA T C Absolute Maximum Ratings: CollectorEmitter Voltage, V CEO NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CollectorBase Voltage, V CBO NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V EmitterBase Voltage, V EBO NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, I C NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Device Dissipation (T = +25C), P 0.4W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A D Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.28mW/C Total Device Dissipation (T = +25C), P C D NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.85mW/C NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.3mW/C Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T 65. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . to +200C stgElectrical Characteristics: (T = 25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V (BR)CEO NTE123A I = 10mA, I = 0 40 V C B NTE159M 60 V CollectorBase Breakdown Voltage V (BR)CBO NTE123A I = 10 A, I = 0 75 V C E NTE159M 60 V EmitterBase Breakdown Voltage V (BR)EBO NTE123A I = 10 A, I = 0 6 V E C NTE159M 5 V Collector Cutoff Current I CEX NTE123A V = 60V, V = 3V 10 nA CE EB(off) NTE159M V = 30V, V = 500mV 50 nA CE BE Collector Cutoff Current I CBO NTE123A V = 60V, I = 0 0.01 A CB E V = 60V, I = 0, T = +150C 10 A CB E A NTE159M V = 50V, I = 0 0.01 A CB E V = 50V, I = 0, T = +150C 10 A CB E A Emitter Cutoff Current (NTE123A Only) I V = 3V, I = 0 10 nA EBO EB C Base Cutoff Current I BL NTE123A V = 60V, V = 3V 20 nA CE EB(off) NTE159M V = 30V, V = 500mV 50 nA CE EB(off) ON Characteristics DC Current Gain h FE NTE123A V = 10V I = 0.1mA, Note 1 35 CE C I = 1mA 50 C I = 10mA, Note 1 75 C I = 10mA, T = 55C 35 C A I = 150mA, Note 1 100 300 C V = 1V, I = 150mA, Note 1 50 CE C V = 10V I = 500mA, Not e 1 40 CE C NTE159M I = 0.1mA 75 C I = 1mA 100 C I = 10mA 100 C I = 150mA, Note 1 100 300 C I = 500mA, Note 1 50 C CollectorEmitter Saturation Voltage V CE(sat) NTE123A I = 150mA, I = 15mA, Note 1 0.3 V C B I = 500mA, I = 50mA, Note 1 1.0 V C B NTE159M I = 150mA, I = 15mA, Note 1 0.4 V C B I = 500mA, I = 50mA, Note 1 1.6 V C B Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.

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