2N2222A NTE

2N2222A electronic component of NTE
2N2222A NTE
2N2222A Bipolar Transistors - BJT
2N2222A  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N2222A Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N2222A Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2N2222A
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: BIPOLAR TRANSISTOR, NPN, 40V, TO-18
Datasheet: 2N2222A Datasheet (PDF)
Price (USD)
50: USD 0.7467 ea
Line Total: USD 37.34 
Availability : 0
  
QtyUnit Price
50$ 0.7467
250$ 0.7315
1000$ 0.7174
2500$ 0.7022
5000$ 0.6882
7500$ 0.673
10000$ 0.659
15000$ 0.6373

Availability 0
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 50
Multiples : 1
QtyUnit Price
50$ 0.7467
250$ 0.7315
1000$ 0.7174
2500$ 0.7022
5000$ 0.6882
7500$ 0.673
10000$ 0.659
15000$ 0.6373


Availability 0
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.2774
10$ 2.8465
25$ 2.683
100$ 2.2875
250$ 2.0672
500$ 1.8026

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the 2N2222A from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N2222A and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE123A (NPN) & NTE159M (PNP) Silicon Complementary Transistors General Purpose Description: The NTE123A (NPN) and NTE159M (PNP) are widely used Industry Standard complementary transis- tors in a TO18 type case designed for applications such as mediumspeed switching and amplifiers from audio to VHF frequencies. Features: Low Collector Saturation Voltage: 1V (Max) High Current GainBandwidth Product: f = 300MHz (Min) I 20mA T C Absolute Maximum Ratings: CollectorEmitter Voltage, V CEO NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CollectorBase Voltage, V CBO NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V EmitterBase Voltage, V EBO NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, I C NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Device Dissipation (T = +25C), P 0.4W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A D Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.28mW/C Total Device Dissipation (T = +25C), P C D NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.85mW/C NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.3mW/C Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T 65. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . to +200C stgElectrical Characteristics: (T = 25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V (BR)CEO NTE123A I = 10mA, I = 0 40 V C B NTE159M 60 V CollectorBase Breakdown Voltage V (BR)CBO NTE123A I = 10 A, I = 0 75 V C E NTE159M 60 V EmitterBase Breakdown Voltage V (BR)EBO NTE123A I = 10 A, I = 0 6 V E C NTE159M 5 V Collector Cutoff Current I CEX NTE123A V = 60V, V = 3V 10 nA CE EB(off) NTE159M V = 30V, V = 500mV 50 nA CE BE Collector Cutoff Current I CBO NTE123A V = 60V, I = 0 0.01 A CB E V = 60V, I = 0, T = +150C 10 A CB E A NTE159M V = 50V, I = 0 0.01 A CB E V = 50V, I = 0, T = +150C 10 A CB E A Emitter Cutoff Current (NTE123A Only) I V = 3V, I = 0 10 nA EBO EB C Base Cutoff Current I BL NTE123A V = 60V, V = 3V 20 nA CE EB(off) NTE159M V = 30V, V = 500mV 50 nA CE EB(off) ON Characteristics DC Current Gain h FE NTE123A V = 10V I = 0.1mA, Note 1 35 CE C I = 1mA 50 C I = 10mA, Note 1 75 C I = 10mA, T = 55C 35 C A I = 150mA, Note 1 100 300 C V = 1V, I = 150mA, Note 1 50 CE C V = 10V I = 500mA, Not e 1 40 CE C NTE159M I = 0.1mA 75 C I = 1mA 100 C I = 10mA 100 C I = 150mA, Note 1 100 300 C I = 500mA, Note 1 50 C CollectorEmitter Saturation Voltage V CE(sat) NTE123A I = 150mA, I = 15mA, Note 1 0.3 V C B I = 500mA, I = 50mA, Note 1 1.0 V C B NTE159M I = 150mA, I = 15mA, Note 1 0.4 V C B I = 500mA, I = 50mA, Note 1 1.6 V C B Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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