2N3019

NTE128 (NPN) & NTE129 (PNP) Silicon Complementary Transistors Audio Output, Video, Driver Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type pack- age designed primarily for amplifier and switching applications. These devices features high break- down voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current range. Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CEO CollectorBase Voltage, V CBO NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V EmitterBase Voltage, V EBO NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A C Total Device Dissipation (T = +25C), P A D NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.6mW/C NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.15mW/C Total Device Dissipation (T = +25C), P C D NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.6mW/C NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, JunctiontoCase, R thJC NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.5C/W NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20C/W Thermal Resistance, JunctiontoAmbient, R thJA NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89.5C/W NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140C/W Lead Temperature (During Soldering, 1/16 from case, 60sec max), T . . . . . . . . . . . . . . . . . +300C L Note 1. NTE129MCP is a matched complementary pair containing 1 each of NTE128 (NPN) and NTE129 (PNP).Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V (BR)CEO NTE128 I = 30mA, I = 0 80 V C B NTE129 I = 10mA 80 V C CollectorBase Breakdown Voltage V (BR)CBO NTE128 I = 100 A, I = 0 140 V C E NTE129 I = 10 A 80 V C EmitterBase Breakdown Voltage V (BR)EBO NTE128 I = 100 A, I = 0 7 V E C NTE129 I = 10 A 5 V E Collector Cutoff Current I CBO NTE128 V = 90V, I = 0 0.01 A CB E V = 90V, I = 0, T = +150C 10 A CB E A NTE129 V = 60V 50 nA CB V = 60V, T = +150C 50 A CB A Emitter Cutoff Current I EBO NTE128 V = 5V, I = 0 0.010 A BE C NTE129 V = 5V 10 A BE ON Characteristics (Note 2) DC Current Gain h FE NTE128 I = 0.1mA, V = 10V 50 C CE I = 10mA, V = 10V 90 C CE I = 150mA, V = 10V 100 300 C CE I = 150mA, V = 10V, T = 55C 40 C CE C I = 500mA, V = 10V 50 C CE I = 1.0A, V = 10V 15 C CE NTE129 I = 100 A, V = 5V 75 C CE I = 100mA, V = 5V 100 300 C CE I = 100mA, V = 5V, T = 55C 40 C CE C I = 500mA, V = 5V 70 C CE I = 1.0A, V = 5V 25 C CE CollectorEmitter Saturation Voltage V CE(sat) NTE128 I = 150mA, I = 15mA 0.2 V C B I = 500mA, I = 50mA 0.5 V C B NTE129 I = 150mA, I = 15mA 0.15 V C B I = 500mA, I = 50mA 0.5 V C B BaseEmitter Saturation Voltage V BE(sat) NTE128 I = 150mA, I = 15mA 1.1 V C B NTE129 0.9 V BaseEmitter ON Voltage (NTE129 Only) V I = 500mA, V = 500mV 1.1 V BE(on) C CE Note 2. Pulse Test: Pulse Width 300 s, Duty Cycle 1%.