We are the renowned 2N3055 Bipolar Transistors - BJT seller and distributer in the USA, India, Europe, Australia, and beyond. 2N3055 Bipolar Transistors - BJT is a manufacturer from NTE. X-ON Electronics Components provides affordable electronic Bipolar Transistors - BJT in the USA.

2N3055

2N3055 electronic component of NTE
Part No.2N3055
Manufacturer: NTE
Category:Bipolar Transistors - BJT
Description: Trans GP BJT NPN 60V 15A 3-Pin(2+Tab) TO-3
Datasheet: 2N3055 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 3.6562 ea
Line Total: USD 36.56

0 - Global Stock
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 10
Multiples : 1
10 : USD 3.6562
100 : USD 2.8844
250 : USD 2.7896
500 : USD 2.7084
1000 : USD 2.5594
2500 : USD 2.4781
5000 : USD 2.451
7500 : USD 2.3562

0 - WHS 2


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 4.2997
3 : USD 3.8766
6 : USD 2.8665
17 : USD 2.7027

We proudly offer the 2N3055 Bipolar Transistors - BJT at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the 2N3055 Bipolar Transistors - BJT.
     
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The 2N3055 Trans GP BJT NPN 60V 15A 3-Pin(2+Tab) TO-3 manufactured by NTE is a high power NPN transistor designed for medium power switching and amplification applications. It features a maximum collector current of 15A, a maximum collector-emitter voltage of 60V, and a B-E breakdown voltage of about 5V. In addition, it has a typical 119 MHz transition frequency, a @25°C thermal resistance of 1.3 deg per mA and a thermal resistance from case to ambient of 83 deg per watt. It also has a low noise level and is long term stable and reliable. It is made with a proprietary TO-3 package, allowing for efficient heat dissipation and a compact design.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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