2N6028 NTE

2N6028 electronic component of NTE
2N6028 NTE
2N6028 Bipolar Transistors - BJT
2N6028  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N6028 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N6028 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2N6028
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor - Programmable - Unijunction - 40 Volts - 300Mw - To 92 Case
Datasheet: 2N6028 Datasheet (PDF)
Price (USD)
25: USD 1.8191 ea
Line Total: USD 45.48 
Availability : 0
  
QtyUnit Price
25$ 1.8191
250$ 1.7809
500$ 1.7555
1000$ 1.7301
2500$ 1.6919
5000$ 1.6665
7500$ 1.641
10000$ 1.6156

Availability 0
Ship by Wed. 06 Aug to Tue. 12 Aug
MOQ : 25
Multiples : 1
QtyUnit Price
25$ 1.8191
250$ 1.7809
500$ 1.7555
1000$ 1.7301
2500$ 1.6919
5000$ 1.6665
7500$ 1.641
10000$ 1.6156

   
Manufacturer
Product Category
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We are delighted to provide the 2N6028 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6028 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N6027 2N6028 www.centralsemi.com SILICON DESCRIPTION: PROGRAMMABLE The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 UNIJUNCTION TRANSISTORS devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characteristics such as Valley Current (I ), Peak Current (I ), and Intrinsic V P Standoff Ratio (). MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Gate-Cathode Forward Voltage V 40 V GKF Gate-Cathode Reverse Voltage V 5.0 V GKR Gate-Anode Reverse Voltage V 40 V GAR Anode-Cathode Voltage V 40 V AK Peak Non-Repetitive Forward Current (t=10s) I 5.0 A TSM Peak Repetitive Forward Current (t=20s, D.C.=1.0%) I 2.0 A TRM Peak Repetitive Forward Current (t=100s, D.C.=1.0%) I 1.0 A TRM DC Forward Anode Current I 150 mA T DC Gate Current I 50 mA G Power Dissipation P 300 mW D Operating Junction Temperature T -50 to +100 C J Storage Temperature T -55 to +150 C stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A 2N6027 2N6028 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=40V - 10 - 10 nA GAO S I V=40V - 50 - 50 nA GKS S I V =10V, R =1.0M - 2.0 - 0.15 A P S G I V =10V, R =10k - 5.0 - 1.0 A P S G I V =10V, R =1.0M - 50 - 25 A V S G I V =10V, R =10k 70 - 25 - A V S G I V =10V, R =200 1.5 - 1.0 - mA V S G V V =10V, R =1.0M 0.2 1.6 0.2 0.6 V T S G V V =10V, R =10k 0.2 0.6 0.2 0.6 V T S G V I=50mA - 1.5 - 1.5 V F F V V =20V, C=0.2F 6.0 - 6.0 - V O B C t V =20V, C=0.2F - 80 - 80 ns r B C R2 (4-February 2014)2N6027 2N6028 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Anode 2) Gate 3) Cathode MARKING: FULL PART NUMBER R2 (4-February 2014) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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