MJE13005 NTE

MJE13005 electronic component of NTE
MJE13005 NTE
MJE13005 Bipolar Transistors - BJT
MJE13005  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MJE13005 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJE13005 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MJE13005
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: T-NPN HIV SW
Datasheet: MJE13005 Datasheet (PDF)
Price (USD)
1: USD 1.6653 ea
Line Total: USD 1.67 
Availability : 0
  
QtyUnit Price
1$ 1.6653
5$ 1.5015
16$ 1.1056
43$ 1.051

Availability 0
Ship by Tue. 09 Sep to Mon. 15 Sep
MOQ : 50
Multiples : 1
QtyUnit Price
50$ 1.7246
100$ 0.9945
200$ 0.9072
500$ 0.8505


Availability 0
Ship by Fri. 05 Sep to Tue. 09 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.6653
5$ 1.5015
16$ 1.1056
43$ 1.051

   
Manufacturer
Product Category
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We are delighted to provide the MJE13005 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJE13005 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The MJE13005 with T-NPN HIV SW manufactured by NTE is an electronic transistor. It has a Darlington complementary type structure, with an NPN and PNP transistor to produce an increased current gain. It is designed for use in linear and switching applications, including power switching circuits, relay circuits, and audio amplifiers. It can handle high voltages and currents, and its collector-emitter voltage is rated up to 100 V and its collector current is rated up to 15 A. It can operate at temperatures ranging from -55°C to +150°C.

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