X-On Electronics has gained recognition as a prominent supplier of NTE10 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE10 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE10 NTE

NTE10 electronic component of NTE
NTE10 NTE
NTE10 Bipolar Transistors - BJT
NTE10  Semiconductors

Images are for reference only
See Product Specifications
Part No. NTE10
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 0.07A 3-Pin TO-92
Datasheet: NTE10 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
25: USD 2.6829 ea
Line Total: USD 67.07 
Availability - 0
MOQ: 25  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 25
Multiples : 1
25 : USD 2.6829
100 : USD 2.2691
250 : USD 2.1356
500 : USD 2.0155
1000 : USD 1.922
2500 : USD 1.8686
5000 : USD 1.8286
7500 : USD 1.8019

0
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ : 1
Multiples : 1
1 : USD 2.646
3 : USD 2.3814
9 : USD 1.9278
23 : USD 1.827

0
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 25
Multiples : 25
25 : USD 3.2924
100 : USD 2.7846
250 : USD 2.6208
500 : USD 2.4734
1000 : USD 2.3587

   
Manufacturer
Product Category
Mounting
Case
Kind Of Transistor
Polarisation
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE10 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE10 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE10 Silicon NPN Transistor UHF Low Noise WideBand Amplifier Features: Low Noise Figure: NF = 2.2dB Typ (f = 0.9GHz) High Power Gain: MAG = 14dB Typ (f = 0.9GHz) High Cutoff Frequency: f = 5GHz Typ T Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V CER EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70mA C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA B Collector Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW C Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C j Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 12V, I = 0 1.0 A CBO CB E Emitter Cutoff Current I V = 2V, I = 0 10 A EBO EB C DC Current Gain h V = 10V, I = 20mA 40 200 FE CE C GainBandwidth Product f V = 10V, I = 20mA 5.0 GHz T CE C Output Capacitance C V = 10V, f = 1MHz 0.8 1.1 pF ob CB Reverse Transfer Capacitance C V = 10V, f = 1MHz 0.5 pF re CB 2 Forward Transfer Gain S V = 10V, I = 20mA, f = 0.9GHz 8 10 dB 21e CE C Maximum Available Power Gain MAG V = 10V, I = 5mA, f = 0.9GHz 14 dB CE C Noise Figure NF V = 10V, I = 5mA, f = 0.9GHz 2.2 4.5 dB CE C.135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min B E C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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