X-On Electronics has gained recognition as a prominent supplier of NTE15 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE15 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE15 NTE

NTE15 electronic component of NTE
Images are for reference only
See Product Specifications
Part No. NTE15
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 19V; 50mA; 300mW
Datasheet: NTE15 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
40: USD 5.109 ea
Line Total: USD 204.36 
Availability - 0
MOQ: 40  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ : 40
Multiples : 1
40 : USD 5.109
50 : USD 4.4415
100 : USD 1.512
200 : USD 1.404
500 : USD 1.296

0
Ship by Fri. 13 Jun to Tue. 17 Jun
MOQ : 1
Multiples : 1
1 : USD 2.3339
3 : USD 2.1033
10 : USD 1.859
11 : USD 1.5333
29 : USD 1.4519

   
Manufacturer
Product Category
Polarisation
Mounting
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE15 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE15 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE15 Silicon NPN Transistor VHF Amp, Mixer, Oscillator, UHF OSC Features: High Transition Frequency: f = 1.1GHz T Low Base Resistance and High Gain Excellent Noise Characteristics Applications: VHF Mixers and Oscillators UHF Oscillators Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19V CEO EmitterBase Voltage, V 4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EBO Collector Current, I 50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C Collector Dissipation, P 300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C Junction Temperature, T +125. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +125C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Breakdown Voltage V I = 1mA 19 V (BR)CEO C CollectorBase Breakdown Voltage V I = 50 A 30 V (BR)CBO C EmitterBase Breakdown Voltage V I = 50 A 5 V (BR)EBO E Collector Cutoff Current I V = 20V 0.5 A CBO CB Emitter Cutoff Current I V = 3V 0.5 A EBO EB DC Current Gain h V = 10V, I = 5mA 39 FE CE C Collector Saturation Voltage V I = 10mA, I = 1mA 0.1 V CE(sat) C B Transition Frequency f V = 5V, I = 10mA 600 1100 MHz T CE E Output Capacitance C V = 10V, f = 1MHz 1.2 1.5 pF ob CB CollectorBase Time Constant C I = 10mA, V = 5V, 10 15 pS dbb C CB f = 31.8MHz.102 .280 (7.11) (2.6) .185 (4.7) EC B .100 (2.54) .138 (3.5) .051 (1.29) .022 (0.55)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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