NTE2319 NTE

NTE2319 electronic component of NTE
NTE2319 NTE
NTE2319 Bipolar Transistors - BJT
NTE2319  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTE2319 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2319 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. NTE2319
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 450V 15A 3-Pin(2+Tab) TO-3
Datasheet: NTE2319 Datasheet (PDF)
Price (USD)
1: USD 12.768 ea
Line Total: USD 12.77 
Availability : 1
  
Ship by Wed. 20 Aug to Fri. 22 Aug
QtyUnit Price
1$ 12.768
2$ 9.912
3$ 9.898
6$ 9.366
25$ 9.128

Availability 1
Ship by Wed. 20 Aug to Fri. 22 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 12.768
2$ 9.912
3$ 9.898
6$ 9.366
25$ 9.128

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
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We are delighted to provide the NTE2319 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2319 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The NTE2319 is a silicon NPN power transistor designed for medium power linear and switching applications. It is capable of operation at collector currents up to 1A and collector-emitter voltages up to 80V. It features a low base-emitter saturation voltage and has useful current gain from 200 to 400. It can be used in a wide range of applications including audio amplifiers, general purpose switching and amplification in consumer, industrial, and telecom applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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