NTE2332 Darlington Silicon NPN Transistor w / Internal Damper & Zener Diode Description: The NTE2332 Darlington transistor is especially well suited for use in switching of L load motor driv- ers, printer hammer drivers, relay drivers, etc. Features: High DC Current Gain Large Current Capacity and Wide ASO Contains 60 10V Avalanche Diode Between Collector and Base Uniformity in CollectortoBase Breakdown Voltage Due to Adoption of Accurate Impurity Diffusion Process 25mJ Reverse Energy Rating Absolute Maximum Ratings: (T = +25C, unless otherwise specified) A Collector to Base Voltage, V , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 10V CBO Collector to Emitter Voltage, V , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 10V CEO Emitter to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A C Peak Collector Current, i . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A cp Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4A B Collector Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W C C Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C, unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 40V, I = 0 10 A CEO CB E Emitter Cutoff Current I V = 5V, I = 0 2 mA EBO EB CElectrical Characteristics (Contd): (T = +25C, unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit DC Current Gain h V = 5V, I = 1A 1000 4000 FE CE C Gain Bandwidth Product f V = 5V, I = 1A 180 MH T CE C Z CollectorEmitter Saturation V I = 1A, I = 4mA 1.0 1.5 V CE(sat) C B Voltage BaseEmitter Saturation V I = 1A, I = 4mA 2.0 V BE(sat) C B Voltage CollectorBase Breakdown V I = 0.1mA, I = 0 50 60 70 V (BR)CBO C E Voltage CollectorEmitter Breakdown V I = 1mA, R = 50 60 70 V (BR)CEO C BE Voltage Unclamped Inductive Load E L = 100mH, R = 100 25 mJ s/b BE Energy TurnOn Time t V = 20V, I = 1A 0.2 s on CC C Storage Time t I = I = 4mA 3.5 s stg B1 B2 Fall Time t I = I = 4mA 0.5 s f B1 B2 .420 (10.67) Max .110 (2.79) C .147 (3.75) .500 B Dia Max (12.7) Max E .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base Emitter .100 (2.54) Collector/Tab