NTE2341(NPN) & NTE2342 (PNP) Silicon Complementary Transistors Darlington Driver Description: The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a TO92 type package designed for general purpose, low frequency applications and as relay drivers. Absolute Maximum Ratings: CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO DC Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A C Total Power Dissipation, P tot T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW A T = +25C, Note 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W A Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Maximum Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . 156K/W thJA Note 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W Note 1. Mounted on a PC Board, max lead length 4mm, mounting pad for collector lead min 10mm x 10mm. Electrical Characteristics: (T = +25C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitterBreakdown Voltage V I = 50mA, I = 0 80 V (BR)CEO C B CollectorBaseBreakdown Voltage V I = 100 A, I = 0 100 V (BR)CBO C B EmitterBase Breakdown Voltage V I = 100 A, I = 0 5 V (BR)EBO E C Collector Cutoff Current I V = 40V, I = 0 500 nA CEO CE B I V = 100V, I = 0 100 nA CBO CB E Emitter Cutoff Current I V = 4V, I = 0 100 nA EBO CE C DC Current Gain h I = 150mA, V = 10V 1000 FE C CE I = 500mA, V = 10V 2000 C CEElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Saturation Voltage V I = 500mA, I = 0.5mA 1.3 V CE(sat) C B I = 1A, I = 1mA 1.8 V C B BaseEmitter Saturation Voltage V I = 1A, I = 1mA, Note 3 2.2 V BE(sat) C B Transition Frequency f I = 500mA, V = 5V, 200 MHz T C CE f = 100MHz NTE2341 (NPN) .135 (3.45) Min C B .210 (5.33) Max Seating Plane E .021 (.445) Dia Max .500 (12.7) NTE2342 (PNP) Min C B E C B E .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max