NTE2347 Silicon NPN Transistor General Purpose, Medium Power Description: The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current, fast switching applications and for power amplifiers. Absolute Maximum Ratings: CollectorBase Voltage (I = 0), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V E CBO CollectorEmitter Voltage (I = 0), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V B CEO EmitterBase Voltage (I = 0), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V C EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A C Total Power Dissipation, P tot T +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W A T +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W C T +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4W C Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25C/W thJC Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175C/W thJA Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 150V, V = 0 1 mA CES CE BE V = 100V, V = 0 1 A CE BE V = 100V, V = 0, T = +150C 100 A CE BE C Emitter Cutoff Current I V = 6V, I = 0 1 mA EBO EB C CollectorEmitter Sustaining Voltage V I = 50mA, I = 0, Note 1 80 V CEO(sus) C B CollectorEmitter Saturation Voltage V I = 5A, I = 500mA, Note 1 1 V CE(sat) C B BaseEmitter Saturation Voltage V I = 5A, I = 500mA, Note 1 1.6 V BE(sat) C B DC Current Gain h I = 2A, V = 2V, Note 1 40 120 FE C CE I = 2A, V = 2V, T = 55C, Note 1 15 C CE C Transition Frequency f I = 500mA, V = 5V 50 MHz T C CE CollectorBase Capacitance C V = 10V, I = 0, f = 1MHz 80 pF CBO CB E TurnOn Time t V = 20V, I = 500mA, I = 500mA 0.35 s on CC C B1 Storage Time t V = 20V, I = 5A, I = I = 500mA 0.35 s s CC C B1 B2 Fall Time t 0.3 s f Note 1. Pulse Test: Pulse Duration = 300 s, Duty Cycle = 1.5%..370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793)