NTE2379 MOSFET NChannel, Enhancement Mode High Speed Switch TO220 Type package D Features: Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling G Simple Drive Requirements S Absolute Maximum Ratings: GateSource Voltage, V ......................................................... 20V GS Drain Current, I D Continuous (V = 10V) GS T = +25 C .............................................................. 6.2A C T = +100 C ............................................................. 3.9A C Pulsed (Note 1) .............................................................. 25A Gate Current (Pulsed), I ........................................................ 1.5A GM Single Pulsed Avalanche Energy (Note 2), E ...................................... 570mJ AS Avalanche Current (Note 1), I ..................................................... 6.2A AR Repetitive Avalanche Energy (Note 1), E .......................................... 13mJ AR Peak Diode Recovery dv/dt (Note 3), dv/dt ........................................... 3V/ns Total Power Dissipation (T = +25 C), P ........................................... 125W C D Derate Above 25 C ....................................................... 1.0W/ C Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Maximum Lead Temperature (During Soldering, 1/16 from case, 10sec), T ............ +300 C L Thermal Resistance: Maximum JunctiontoCase, R ......................................... 1.0 C/W thJC Typical Case toSink (Mounting surface flat, smooth, and greased), R ...... 0.5 C/W thCS Maximum Junction toAmbient (Free Air Operation), R .................... 62 C/W thJA Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. V = 50V, starting T = +25 C, l = 27mH, R = 25 , I = 6.2A. DD J G AS Note 3. I 6.2A, di/dt 80A/ A, V V , T +150 C. SD DD (BR)DSS J Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage BV V = 0V, I = 250 A 600 V DSS GS D Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D GateSource Leakage Forward I V = 20V 100 nA GSS GS GateSource Leakage Reverse I V = 20V 100 nA GSS GS DrainSource Leakage Current I V = 600V, V = 0 100 A DSS DS GS V = 480V, V = 0, T = +150 C 500 A DS GS C Static DrainSource ON Resist- R V = 10V, I = 3.7A, Note 4 1.2 DS(on) GS D ance Forward Transconductance g V 100V, I = 3.7A, Note 4 4.7 mhos fs DS D Input Capacitance C V = 0V, V = 25V, f = 1MHz 1300 pF iss GS DS Output Capacitance C 160 pF oss Reverse Transfer Capacitance C 30 pF rss TurnOn Delay Time t V = 300V I = 6.2A, R = 9.1 , 32 ns d(on) DD , D G R = 47 , Note 4 D Rise Time t 18 ns r TurnOff Delay Time t 55 ns d(off) Fall Time t 20 ns f Total Gate Charge Q 60 nC V = 10V, I = 6.2A, V = 360V g GS D DS GateSource Charge Q 8.3 nC gs GateDrain (Miller) Charge Q 30 nC gd Internal Drain Inductance L Between lead, 6mm (.250 in) from package 4.5 nH D and center of die contact Internal Source Inductance L 7.5 nH S SourceDrain Diode Ratings and Characteristics Continuous Source Current I (Body Diode) 6.2 A S Pulse Source Current I (Body Diode) Note 1 25 A SM Diode Forward Voltage V T = +25 C, I = 6.2A, V = 0V, Note 4 1.5 V SD J S GS Reverse Recovery Time t T = +25 C, I = 6.2A, di/dt = 100A/ s, 450 940 ns rr J F Note 4 Reverse Recovery Charge Q 3.8 7.9 C rr Forward TurnOn Time t Intrinsic turnon time is neglegible (turn on is dominated by L + L ) on S D Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.