NTE2388 NTE

NTE2388 MOSFET NChannel Enhancement Mode, High Speed Switch Description: The NTE2388 is an NChannel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. D Features: Silicon Gate for Fast Switching Speeds Low r to Minimize On Losses. DS(on) Specified at Elevated Temperatures. G Rugged SOA is Power Dissipation Limited Source toDrain Diode Characterized for Use With Inductive Loads S Absolute Maximum Ratings: DrainSource Voltage, V ........................................................ 200V DSS DrainGate Voltage (R = 20k ), V ............................................. 200V GS DGR GateSource Voltage, V ......................................................... 20V GS Drain Current, I D Continuous T = +25 C ............................................................... 18A C T = +100 C1..............................................................1A C Peak T = +25 C ............................................................... 72A C Total Power Dissipation (T = +25 C), P ........................................... 125W C D Derate Above 25 C ......................................................... 1W/ C Maximum Operating Junction Temperature Range, T ......................... 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Maximum Thermal Resistance, Junction toCase, R .............................. 1 C/W thJC Maximum Thermal Resistance, Junction toAmbient, R ........................ 62.5 C/W thJA Maximum Lead Temperature (During soldering, 1/8 from case for 5sec), T ............ +300 C L Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics DrainSource Breakdown Voltage V I = 250 A, V = 0 200 V (BR)DSS D GS ZeroGate Voltage Drain Current I V = 0, V = Max Rating 200 A DSS GS DS V = 0, V = 160V, 1000 A GS DS T = +125 C C GateBody Leakage Current, Forward I V = 0, V = 20V 100 nA GSSF DS GSF GateBody Leakage Current, Reverse I V = 0, V = 20V 100 nA GSSR DS GSR ON Characteristics (Note 1) Gate Threshold Voltage V V = V , I = 250 A 2 4 V GS(th) DS GS D Static Drain Source On Resistance R V = 10V, I = 10A 0.18 DS(on) GS D OnState Drain Current I V = 10V, V 3.2V 18 A D(on) GS DS Forward Transconductance g V 3.2V, I = 10A 6 mhos fs DS D Dynamic Characteristics Input Capactiance C V = 25V, V = 0, 1600 pf iss DS GS f = 1MHz Output Capacitance C 750 pf oss Reverse Transfer Capactiance C 300 pf rss Switching Characteristics (Note 1) TurnOn Time t V 75V, I = 10A , 30 ns d(on) DD D PEAK R = 4.7 g Rise Time t 60 ns r TurnOff Delay Time t 80 ns d(off) Fall Time t 60 ns f Total Gate Charge Q V = 160V, V = 10V, 38 60 nC g DS GS I = Rated I D D GateSource Charge Q 16 nC gs GateDrain Charge Q 22 nC gd Source Drain Diode Characteristics (Note 1) Forward ON Voltage V I = Rated I , V = 0 1.8 2.0 V SD S D GS Forward TurnOn Time t Limited by stray inductance on Reverse Recovery Time t 450 ns rr Internal Package Inductance Internal Drain Inductance L Measured from the contact 3.5 nH d screw on tab to center of die Measured from the drain lead 4.5 nH 0.25 from package to center of die Internal Source Inductance L Measured from the source 7.5 nH s lead 0.25 from package to source bond pad Note 1. Pulse test: Pulse width 300 s, Duty cycle 2%.