NTE238 Silicon NPN Transistor Color TV, Horizontal Output Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: V = 1500V CEX Safe Operating Area 50 s = 20A, 400V Absolute Maximum Ratings CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V CEX EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EB Collector CurrentContinuous, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A C Base CurrentContinuous, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A B Emitter CurrentContinuous, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A E Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W C D Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25C/W thJC Maximum Lead Temperature (Soldering Purposes, 1/8 from case for 5sec), T +275. . . . . . . . . C L Electrical Characteristics: (T =+25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V V = 50mA, I = 0 750 V CEO(sus) C B Collector Cutoff Current I V = 1500V, V = 0 0.25 mA CES CE BE Emitter Cutoff Current I V = 5V, I = 0 0.1 mA EBO BE C ON Characteristics (Note 1) CollectorEmitter Saturation Voltage V I = 5A, I = 1A 5.0 V CE(sat) C B Base Emitter Saturation Voltage V I = 5A, I = 1A 1.5 V BE(sat) C B SWITCHING CHARACTERISTICS Fall Time t I = 5A, I = 1A, L = 8 H 0.4 1.0 s f C B1 B Note 1. Pulse test: Pulse Width 300 s, Duty Cycle = 2%..135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) E 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max B C/Case