NTE2956 MOSFET NChannel, Enhancement Mode High Speed Switch TO220 Full Pack Type Package Features: R = 380m Max V = 10V, I = 8A DS(on) GS D Low Gate Charge: 32nC Typ D Low C : 20pF Typ RSS 100% Avalanche Tested Applications: G LCD/LED/PDP TV Lighting Uninterruptible Power Supply S Absolute Maximum Ratings: (T = +25C unless otherwise specified) C DrainSource Voltage, V ........................................................ 500V DSS GateSource Voltage, V ........................................................ 30V GSS Drain Current (Note 1), I D Continuous T = +25C ............................................................... 16A C T = +100C ............................................................. 9.6A C Pulsed (Note 2) .............................................................. 64A Single Pulsed Avalanche Energy (Note 3), E ...................................... 780mJ AS Avalanche Current (Note 2), I ...................................................... 16A AR Repetitive Avalanche Energy (Note 2), E .......................................... 20mJ AR Peak Diode Recovery dv/dt (Note 4), dv/dt .......................................... 4.5V/ns Power Dissipation (T = +25C), P ................................................ 38.5W C D Derate Above +25 C ...................................................... 0.3W/ C Operating Temperature Range, T .......................................... 55 to +150C J Storage Temperature Range, T .......................................... 55 to +150C stg Maximum Lead temperature (During Soldering, 1/8 from case, 5 sec ), T .............. +300 C L Maximum Thermal Resistance, Junction toCase, R ............................ 3.3 C/W thJC Maximum Thermal Resistance, Junction toAmbient, R ........................ 62.5 C/W thJA Note 1. Drain current limited by maximum junction temperature. Note 2. Repetitive rating pulse width limited by maximum junction temperature. Note 3. L = 5.5mH, I = 16A, V = 50V, R = 25 , starting T = +25C. AS DD G J Note 4. I 16A, di/dt 200A/ s, V V , starting T = +25C. SD DD (BR)DSS J Rev. 714Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics DrainSource Breakdown Voltage V V = 0V, I = 250 A 500 V (BR)DSS GS D Breakdown Voltage Temperature Coefficient V / T I = 250 A, Referenced to +25 C 0.5 V/ C (BR)DSS J D Zero Gate Voltage Drain Current I V = 500V, V = 0 1.0 A DSS DS GS 10 V = 400V, T = +125 C A DS C GateBody Leakage Current I V = 30V, V = 0V 100 nA GSS GS DS ON Characteristics Gate Threshold Voltage V V = V , I = 250 A 3.0 5.0 V GS(th) DS GS D Static DrainSource ON Resistance R V = 10V, I = 8A 0.31 0.38 DS(on) GS D Forward Transconductance g V = 40V, I = 8A 23 S FS DS D Dynamic Characteristics Input Capacitance C 1495 1945 pF V = 0V, V = 25V, iss GS DS f = 1MHz Output Capacitance C 235 310 pF oss Reverse Transfer Capacitance C 20 30 pF rss Switching Characteristics TurnOn Delay Time t 40 90 ns V = 250V I = 16A, d(on) DD , D R = 25 , Note 5 G Rise Time t 150 310 ns r TurnOff Delay Time t 65 140 ns d(off) Fall Time t 80 170 ns f Total Gate Charge Q V = 400V I = 16A, 32 45 nC g DD , D V = 10V, Note 5 GS GateSource Charge Q 8.5 nC gs GateDrain Charge Q 14 nC gd DrainSource Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode I 9.2 A S Forward Current Maximum Pulsed Drain-Source Diode I 37 A SM Forward Current DrainSource Diode Forward Voltage V V = 0V, I = 16A 1.4 V SD GS S Reverse Recovery Time t V = 0V, I = 16A, 490 ns rr GS S dI /dt = 100A/ s F Reverse Recovery Charge Q 5.0 C rr Note 5. Essentially independent of operating temperature typical characteristics.