Product Information

NTE2937

NTE2937 electronic component of NTE

Datasheet
Transistor: P-JFET; 30V; TO92

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 2.9276 ea
Line Total: USD 29.28

13 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
13 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 10
Multiples : 1
10 : USD 2.8375
100 : USD 2.2375
250 : USD 2.1875
500 : USD 2.1125
1000 : USD 2
2500 : USD 1.95
5000 : USD 1.9125
7500 : USD 1.8875

31 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 2.951
3 : USD 2.652
8 : USD 2.34
20 : USD 2.21
25 : USD 2.132

     
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
LoadingGif

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NTE2937 PChannel Field Effect Transistor Switch, TO92 Type Package Features: Low Insertion Loss No Offset or Error Generated by Closed Switch Purely Resistive High Isolation Resistance From Driver Short Sample and Hold Aperture Time Fast Switching Applications: Analog Switches Choppers Commutators Absolute Maximum Ratings: (T = +25 C, Note 1 unless otherwise specified) A GateDrain or GateSource Voltage .................................................. 30V Gate Current .................................................................... 50mA Power Dissipation .............................................................. 350mW Derate Above 25 C ....................................................... 3.3W/ C Operating Temperature Range ............................................. 55 to +150 C Storage Temperature Range ............................................... 55 to +150 C Lead Temperature (During Soldering, 10sec) ....................................... +300 C Note 1. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Gate Reverse Current I V = 20V, V = 0V, Note 2 1 nA GSS GS DS GateSource Cutoff Voltage V V = 15V, I = 10nA 5 10 V GS(off) DS D GateSource Breakdown Voltage BV V = 0V, I = 1 A 30 V GSS DS G Drain Saturation Current I V = 15V, V = 0V, Note 3 20 135 mA DSS DS GS Drain Cutoff Current I V = 15V, V = 10V, Note 2 1 nA D(off) DS GS DrainSource ON Resistance r V = 0.1V, V = 0V 85 DS(on) DS GS DrainGate OFF Capacitance C V = 10V, V = 0V, f = 1Mhz, Note 4 5.5 pF dg(off) GS DS SourceGate OFF Capacitance C 5.5 pF sg(off) DrainGate Plus SourceGate C V = V = 0V, f = 1Mhz, Note 4 32 pF dg(on) GS DS ON Capacitance C + sg(on) TurnOn Delay Time t V = 10V V = 12V, R = 560 , 2 ns d(on) DD , GS(off) L V = 0V, Note 4 GS(off) Rise Time t 5 ns r TurnOff Delay Time t 5 ns d(off) Fall Time t 10 ns f Note 2. Approximately doubles for every +10 C increase in T . A Note 3. Pulse Test Duration: Pulse Width = 300 s, Duty Cycle 3%. Note 4. For design reference only, no 100% tested. .135 (3.45) Min .210 (5.33) Max Seating Plane .500 .021 (.445) Dia. Max (12.7) Min D G S .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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